Defect structure of carbon rich a-SiC:H films and the influence of gas and heat treatments

Abstract

Articles you may be interested inReduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment

Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

“…However, as T a further increases from 400 to 700 8C, the intensity of C-H bonds gradually decreases, caused by the disruption of C-H bonds at T a above 400 8C. This is in good agreement with what has been reported by Friessnegg et al [24] who find that C-H bonds in the a-SiC:H films start to dissociate at T a slightly above 400 8C. The absorption band at $780 cm À1 is attributed to the Ge-C stretching vibration [1,2,17], and no significant changes in the line shape and intensity for the Ge-C peak occur with increasing T a up to 400 8C.…”

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

“…In previous studies, authors have primarily utilized FTIR to determine either the hydrogen content or the concentration of some other single element in a dielectric material. In a few cases, other researchers have utilized previously published values for K SiC , K SiH , and K CH to calculate the total Si-C, Si-H, and C-H bond densities in a-SiC:H thin films [57,[60][61][62]. Unfortunately, in none of these reports were elemental or mass densities computed and/or cross calibrated to other techniques.…”

“…Quantitative FTIR measurements of bond concentrations in a-SiC x and a-SiC x :H films have been reported by others [57][58][59][60][61][62]. These studies have typically relied on IR absorption cross sections reported for individual chemical bonds in non-SiC:H films.…”

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

“…The Ar + ion sputtering and annealing process does not produce a stoichiometric, single crystalline SiC surface. It leaves the surface with many defects and an excess of carbon because the Si preferentially evaporates during annealing [19][20][21][22]. The cleaning treatment does, however, remove the C, P, and Fe deposited during the course of experiments and does create a highly reproducible surface.…”