Defects in epitaxial Si-doped GaInP

Abstract

We have characterized by capacitance-voltage and deep level transient spectroscopy measurements the only defect detected in Si-doped GaInP layers. This defect exhibits an ionization energy of 0.435 eV but is located only at ∼20 meV below the bottom of the conduction band. All its characteristics, i.e., energy level, apparent capture barrier, ionization energy, can be understood if the defect is a donor associated DX center. Its cross section for electron and hole capture have been measured. The effect of an electric field on the ionization energy confirms that the defect is indeed shallow and a donor.

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells

“…Indeed, n-type InGaP previous studies 7, 8 have shown that this material contains a main defect, identified as the DX center, which emits around 150 K and is characterized by an ionization energy strongly varying with the electric field. 7 The ionization energy ͑0.20 eV͒, measured from the variation of the emission rate versus temperature, is also in agreement with the value of the ionization energy associated with the DX center under the high electric field of the junction used here. 7 The center is partially filled by hole injection from the p side, the free carrier tail in the depletion region is not negligible even in reverse bias.…”

“…7 The ionization energy ͑0.20 eV͒, measured from the variation of the emission rate versus temperature, is also in agreement with the value of the ionization energy associated with the DX center under the high electric field of the junction used here. 7 The center is partially filled by hole injection from the p side, the free carrier tail in the depletion region is not negligible even in reverse bias. Regarding solar cell performance, this defect is not expected to be an efficient recombination center, owing its energetical location in the gap.…”

“…Regarding solar cell performance, this defect is not expected to be an efficient recombination center, owing its energetical location in the gap. 7 The 1 MeV electron irradiation with a dose of 3 ϫ10 16 cm Ϫ2 , produced two new majority ͑hole͒ peaks labeled H1 and H2 having concentrations of 6.8ϫ10 14 cm Ϫ3 and 2.8ϫ10 15 cm Ϫ3 , respectively, and three new minority ͑electron͒ peaks labeled E1, E2, and E3 having concentrations of 3.1ϫ10 15 , 3.9ϫ10 15 , and 5.1ϫ10 16 cm Ϫ3 , respectively, as shown in Figs. 1͑b͒ and 1͑c͒.…”

Persistent photoconductivity in InGaP/GaAs heterostructures

“…8,9 Recently, persistent photoconductivity ͑PPC͒ has been observed in GaInP/GaAs heterostructures, and it is suggested that the PPC effect is due to the existence of DX centers in GaInP layers similar to that of AlGaAs/GaAs heterostructures. [10][11][12] In this letter, through a detailed study of the dependence on excitation photon energy and decay kinetics, we suggest that the PPC effect is due to electrons and holes separated by the macroscopic potential barrier between the heterointerface and the substrate for GaInP/GaAs heterostructures. In addition, we also show that the incorporation of atomic hydrogen can be used to reduce the PPC effect and enhance the photosensitivity in InGaP/GaAs heterostructures.…”

Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

“…7 Several studies have investigated deep levels in InGaP material grown by various techniques. Defects were reported in InGaP layers grown by MOCVD, [8][9][10][11] vapor phase epitaxy, 12 liquid phase epitaxy, 13-15 metalorganic molecularbeam epitaxy, 16 as well as gas-source 17,18 and solid-source molecular-beam epitaxy. 19 In this article, we report a deep-level transient spectroscopy ͑DLTS͒ study of the deep levels in the emitter layer of Ga 0.51 In 0.49 P/GaAs HBT transistors grown by MOCVD.…”