Deformation potential constants of biaxially tensile stressed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow></mml:math>epitaxial films on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>

Liu, Jifeng; Cannon, D.D.; Wada, Kazumi; Ishikawa, Yasuhiko; Danielson, David T.; Jongthammanurak, Samerkhae; Michel, Jürgen; Kimerling, Lionel C.

doi:10.1103/physrevb.70.155309

Cited by 164 publications

(104 citation statements)

References 25 publications

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“…7(a) shows changes in the band-edge energies for Ge as a function of in-plane strain [24,25] calculated using deformation potential values reported in Refs. [27] and [28]. Under the tensile strain, the conduction band energy at the Γ point is decreased, while the light-hole (LH) valence band splits from the heavy-hole (HH) band, accompanying the energy increase.…”

Section: Epitaxial Growth Of Ge On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Epitaxial Growth Of Ge On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…We are interested in the displacement of the top electrode caused by the charge transport (linear response). This phenomenon is controlled by a number of factors, such as the deformation potential [98,99], Vegard expansion [100], and the converse flexoelectric effect. The contribution of the latter can be described using the constitutive equation for the converse flexoelectric effect, taken in the form (14): (91) and the Poisson equation…”

Section: Electromechanics Of Moderate Conductorsmentioning

confidence: 99%

Fundamentals of flexoelectricity in solids

2013

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The flexoelectric effect is the response of electric polarization to a mechanical strain gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is the response of polarization to strain itself. However, at the nanoscale, where large strain gradients are expected, the flexoelectric effect becomes appreciable. Besides, in contrast to the piezoelectric effect, flexoelectricity is allowed by symmetry in any material. Due to these qualities flexoelectricity has attracted growing interest during the past decade. Presently, its role in the physics of dielectrics and semiconductors is widely recognized and the effect is viewed as promising for practical applications. On the other hand, the available theoretical and experimental results are rather contradictory, attesting to a limited understanding in the field. This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.

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“…Fortunately, however, the energy difference between the direct Γ valley and the indirect L valley is only 136meV. Moreover, this difference can be reduced further by introducing tensile strain in Ge due to the different deformation potential parameters in the two valleys [5]. Recently, heavily ntype doped Ge under 0.2% tensile strain from thermal mismatch during Ge growth has recently shown direct band gap light emission attributed to the band filling effect and the direct band gap reduction [6][7][8].…”

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Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

Nam

Sukhdeo

Cheng

et al. 2012

Applied Physics Letters

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We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

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Deformation potential constants of biaxially tensile stressedGeepitaxial films onSi(100)

Cited by 164 publications

References 25 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Fundamentals of flexoelectricity in solids

Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

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