1994
DOI: 10.1109/3.283796
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Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation

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Cited by 103 publications
(34 citation statements)
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“…Sudden failure occurs when the COD level reaches the operating power level [18]. The facet degradation of InGaAs/GaAs strained-layer lasers has been analyzed with the OBIC technique.…”
Section: Facet Degradationmentioning
confidence: 99%
“…Sudden failure occurs when the COD level reaches the operating power level [18]. The facet degradation of InGaAs/GaAs strained-layer lasers has been analyzed with the OBIC technique.…”
Section: Facet Degradationmentioning
confidence: 99%
“…This mechanism has been known to cause catastrophic optical damage in InGaAs QW lasers through facet oxidation or defect formation under high-power operation [38][39][40][41] . To test this hypothesis, we wanted to examine if the rate of degradation would depend on the proximity of the InGaAs QW to the semiconductor-air interface.…”
Section: Dependence On Cap Thicknessmentioning
confidence: 99%
“…Laser damage occurs long before power densities of this magnitude, due to nonradiative centers and catastrophic optical damage (COD) to the mirrors [34]. COD is attributed to large power densities on the facets of edge-emitting lasers.…”
Section: Single-mode Ridge and Multi-mode Broad-area Lasersmentioning
confidence: 99%