Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal

Chandrasekhar, S.; Hoppe, Michael; Dentai, A.G.; Joyner, C.H.; Qua, G.J.

doi:10.1109/55.119185

Cited by 78 publications

(44 citation statements)

References 5 publications

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“…Although much work has been done on high-speed phototransistors, [85] a classic design conflict exists between the simultaneous optimization of high-frequency performance and optical coupling efficiency. In lumped-element heterojunction phototransistors (HPTs), the devices need to be scaled down in size for high-speed operation.…”

Section: Traveling-wave Heterojunction Phototransistorsmentioning

confidence: 99%

Polymer-Based Optical Waveguides: Materials, Processing, and Devices

Jen²,

2002

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Polymer optical waveguide devices will play a key role in several rapidly developing areas of broadband communications, such as optical networking, metropolitan/access communications, and computing systems due to their easier processibility and integration over inorganic counterparts. The combined advantages also makes them an ideal integration platform where foreign material systems such as YIG (yttrium iron garnet) and lithium niobate, and semiconductor devices such as lasers, detectors, amplifiers, and logic circuits can be inserted into an etched groove in a planar lightwave circuit to enable full amplifier modules or optical add/drop multiplexers on a single substrate. Moreover, the combination of flexibility and toughness in optical polymers makes it suitable for vertical integration to realize 3D and even all‐polymer integrated optics. In this review, a survey of suitable optical polymer systems, their processing techniques, and the integrated optical waveguide components and circuits derived from these materials is summarized. The first part is focused on discussing the characteristics of several important classes of optical polymers, such as their refractive index, optical loss, processibility/mechanical properties, and environmental performance. Then, the emphasis is placed on the discussion of several novel passive and active (electro‐optic and thermo‐optic) polymer systems and versatile processing techniques commonly used for fabricating component devices, such as photoresist‐based patterning, direct lithographic patterning, and soft lithography. At the end, a series of compelling polymer optical waveguide devices including optical interconnects, directional couplers, array waveguide grating (AWG) multi/demultiplexers, switches, tunable filters, variable optical attenuators (VOAs), and amplifiers are reviewed. Several integrated planar lightwave circuits, such as tunable optical add/drop multiplexers (OADMs), photonic crystal superprism waveguides, digital optical switches (DOSs) integrated with VOAs, traveling‐wave heterojunction phototransistors, and three‐dimensionally (3D) integrated optical devices are also highlighted.

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Section: Traveling-wave Heterojunction Phototransistorsmentioning

confidence: 99%

Polymer-Based Optical Waveguides: Materials, Processing, and Devices

Jen²,

2002

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“…This paper concems a physics-based quantitative analysis of the optical response of the HBT, supported by experimental verification. Although Chandrasekhar et al [6] have clearly shown the superiority of 3-terminal compared to 2-terminal devices, we believe that such performance can be further improved by taking advantage of the internal photoconductive effect when the transistor is biased with a true current source. The following sections describe the different mechanisms associated with the photoresponse depending on the biasing configuration.…”

Section: Introductionmentioning

confidence: 93%

Bias dependent gain and speed mechanism in illuminated HBTs

Barros

Paolella²,

Herczfeld

et al. 1996

1996 26th European Microwave Conference

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A physics-based quantitative analysis of the illuminated HBT, with empirical verification, is discussed. A novel optical mechanism, internal photoconductivity, with large gain and bandwidth is described. The responsivity of the device can be considerably improved, 20-fold in this case, with a constant external base current biasing configuration as opposed to the constant base-emitter voltage case. The transient response of the HBT is discussed regarding incident optical power and biasing.

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“…This current is more significant than ISS and is usually large in heterojunction devices due to the strong and dominant recombination in the base emitter space charge region (Campbell and Ogawa, 1982;Chandrasekhar et al, 1991;Lin et al, 2000;Tan et al, 2004;Park et al, 2010). As we shall see shortly, scaling of the injector with respect to the trapping layer reduces this recombination current ideally by the ratio of trapping layer to injector area (AB/AE).…”

Section: Impact Of the Unique Three-dimensional Geometry On The Perfomentioning

confidence: 99%

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

2016

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Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels, and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status, and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays (FPAs) for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time in 2007. It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. This together with the feedback stabilized gain mechanism, makes formation of large-format high pixel density electr on-injection FPAs less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system and has a cutoff wavelength of 1700 nm. The layer structure consists of 500 nm InP injector/50 nm InAlAs etch stop/50 nm GaAsSb electron barrier (and hole trap)/1 μm InGaAs absorber. The epitaxial layers are grown on InP substrates. Electron-injection detector takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. EI detectors have been designed, fabricated, and tested during two generations of development and optimization cycles. We review our imager results using the firstgeneration detectors. In the second-generation devices, the dark current is reduced by two orders of magnitude, and bandwidth is improved by four orders of magnitude. The dark current density of the second-generation EI detector is shown to outperform the stateof-the-art technology, the SWIR HgCdTe eAPD by more than one order of magnitude. We demonstrate a performance comparison with other SWIR detector technologies with internal amplification and show that the electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature. Second-generation devices provide high-speed response ~6 ns rise time, low jitter ~12 ps, high amplification of more than FiGURe 1 | The trend in noise reduction for state-of-the-art SwiR imaging arrays with cutoff wavelength (λc) ~1-1.5 μm over the past 30 years: the equivalent input noise of the ROiC determines the ...

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Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal

Cited by 78 publications

References 5 publications

Polymer-Based Optical Waveguides: Materials, Processing, and Devices

Polymer-Based Optical Waveguides: Materials, Processing, and Devices

Bias dependent gain and speed mechanism in illuminated HBTs

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

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