Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

Sidorov, Yu. G.; Yakushev, M. V.; Варавин, В. С.; Колесников, А. В.; Trukhanov, E. M.; Sabinina, I. V.; Loshkarev, I. D.

doi:10.1134/s1063783415110311

Cited by 19 publications

(13 citation statements)

References 8 publications

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“…The average values of CdTe/GaAs plane misorientation (tilt) and its azimuthal angle change for the groups of samples with particular SnTe thickness are up to 0.61 and up to 181, respectively. As it was established, the tilt is created by a network of misfit dislocations 70 and is proportional to the lattice mismatch between the substrate and the layer. 71 Thus, this kind of network must be present in our samples.…”

Section: General Crystallographic Quality Of the Samplesmentioning

confidence: 99%

Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution

et al. 2022

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Section: General Crystallographic Quality Of the Samplesmentioning

confidence: 99%

Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution

et al. 2022

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“…In the case of Hg 0.7 Cd 0.3 Te grown on (013)-oriented CdTe like in samples studied here, the lattice mismatch is 0, 216% and the calculated critical thickness varies from 47.5 to 344 nm for 12 possible slip systems of dislocations classified by orientation of the slip plane and Burgers vector. 32 The experimental part of Ref. [32] reports that dislocations begin to form when the film thickness exceeds 80 nm.…”

Section: A Surface States and Strain Relaxationmentioning

confidence: 99%

“…32 The experimental part of Ref. [32] reports that dislocations begin to form when the film thickness exceeds 80 nm. Starting from 150 nm, a dislocation network emerges which results in about 40% strain relaxation.…”

Section: A Surface States and Strain Relaxationmentioning

confidence: 99%

Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

Candussio

Budkin

Otteneder

et al. 2019

Phys. Rev. Materials

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We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. arXiv:1902.02972v2 [cond-mat.mes-hall]

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“…This was not surprising, as MCT/GaAs and MCT/Si films were known to have different dislocation density and other parameters related to defects at the macro-scale (see, e.g. [4][5][6]). However, the comparison of carrier lifetime in MCT/GaAs and MCT/Si films was not performed.…”

mentioning

confidence: 94%

Acceptor states in HgCdTe films grown by molecular‐beam epitaxy on GaAs and Si substrates

Yakushev

Mynbaev

Bazhenov

et al. 2016

Phys. Status Solidi C

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A study of defects in HgCdTe films grown by molecular‐beam epitaxy on GaAs and Si substrates was performed. Variable‐temperature photoluminescence (PL) and carrier lifetime measurements were carried out on as‐grown films and films subjected to post‐growth annealings. Films grown on GaAs substrates appeared to be mostly free from defects providing energy states within the bandgap, yet specific acceptor states were generated in these films under conditions associated with mercury deficiency. The properties of films grown on Si substrates were mostly governed by two types of uncontrolled defects. Relatively deep levels with energy 40 to 70 meV were revealed with the use of PL measurements, yet their effect on the lifetime was not traced. The lifetime value was rather determined by other type of defects with energy depth of ∼30 meV. Possible relation of these defects to the specifics of MBE growth of HgCdTe on Si substrates is discussed. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

Cited by 19 publications

References 8 publications

Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution

Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution

Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

Acceptor states in HgCdTe films grown by molecular‐beam epitaxy on GaAs and Si substrates

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