Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

Merchant, S.; Arnold, E.; Baumgart, Helmut; Egloff, R.; Letavic, T.; Mukherjee, S.; Pein, H.

doi:10.1109/ispsd.1993.297121

Cited by 67 publications

(30 citation statements)

References 6 publications

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“…Using the electron continuity equation [16] and neglecting recombination and generation currents yields (4) where is the channel charge density, the surface potential at position the surface mobility, and the effective length of the channel, defined by the length of the underdiffusion of the -well minus the underdiffusion of the source well . is denoted by at and by at .…”

Section: A Inversion-channel Currentmentioning

confidence: 99%

“…Note that the model can also be used for the offset drain structure, being the MV structure with the thickness of the field oxide being zero. HV LDMOS transistors often have a graded doping profile in the drift region to fullfill the conditions of the RESURF principle [3], [4], or use superjunction techniques [5]. At present, these HV devices are very technology dependent, and it would be difficult to develop one general model for this type of device; this task is left for a succeeding research project.…”

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confidence: 99%

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MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

D'Halleweyn

Benson

Redman-White

et al. 2004

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are smooth and continuous in all operating regimes. Attention is also given to the modeling of inversion at the back oxide to ensure correct behavior is predicted for a source follower in power control applications ("high side operation"). A surface-potential-based formulation is used for the inversion/accumulation channel giving smooth transitions between different regions of operation, and care has been taken to ensure all expressions are smooth and infinitely differentiable to achieve the best possible convergence performance. Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion.The model has been installed in a commercial SPICE-type circuit simulator and evaluated against individual devices and complete circuits fabricated in an industrial smart power SOI process. Accuracy is significantly improved with respect to the existing LDMOS models, and convergence behavior in switching and linear circuit simulations is comparable with industry standard models of this complexity.

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Section: A Inversion-channel Currentmentioning

confidence: 99%

mentioning

confidence: 99%

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

D'Halleweyn

Benson

Redman-White

et al. 2004

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…with A n = 7.03 · 10 5 cm −1 and B n = 1.47 · 10 5 Vcm −1 [52] the (silicon) coefficients at room temperature. Figure 5.5 shows the ionization integral and corresponding multiplication along these separate paths for the device under study (Fig.…”

Section: Off-state Multiplicationmentioning

confidence: 99%

“…RESURF optimization primarily aims to achieve a constant horizontal field at reverse (electrical) breakdown using various methods like pn-junctions [26], super-junctions [31], fieldplates (FP) [52] or a combination thereof [53].…”

Section: Introductionmentioning

confidence: 99%

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Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

Boksteen¹

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Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

Chow

2011

Phys. Status Solidi C

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The design of AlGaN/GaN heterojunction in high‐voltage lateral GaN MOS‐HEMT was studied and optimized. The effect of the heterojunction on the breakdown voltage of the device was studied using numerical simulations. The effect of the addition of a GaN cap layer on top of the AlGaN/GaN structure was evaluated, showing a higher breakdown voltage as well as a lower oxide field at the gate corner, due to the better Reduced Surface Field (RESURF) effect that originated from the balanced polarization charges. Further a 2‐zone RESURF design was achieved by etching part of the GaN cap in the drift region. The 2‐zone RESURF device showed 33% improvement in breakdown voltage from simulations compared with single zone RESURF devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

Cited by 67 publications

References 6 publications

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

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