Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface

Arkun, F. Erdem; Berkman, E. A.; El‐Masry, N. A.; Zavada, J. M.; Reed, Meredith; Bedair, S. M.

doi:10.1063/1.1810216

Cited by 34 publications

(18 citation statements)

References 5 publications

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“…22 It has also been reported that the charge transfer occurs across adjacent layer in Ga 1−x Mn x N/ p-GaN : Mg and Ga 1−x Mn x N/n-GaN:Si heterostructures. 23 In that report, it has been indicated that a large number of electrons ͑holes͒ are transferred from adjacent n-type ͑p-type͒ layer into the sample. The difference thus may be explained by the scenario of the charge transfer from Sn-doped n-type GaN to Ga 1−x Mn x N ͑i.e., electron doping into Ga 1−x Mn x N͒.…”

Section: Methodsmentioning

confidence: 99%

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductorGa1−xMnxN

et al. 2005

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We have studied the electronic structure of the diluted magnetic semiconductor Ga 1−x Mn x N ͑x = 0.0, 0.02, and 0.042͒ grown on Sn-doped n-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L-edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a MnN 4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga 1−x Mn x N is stronger than that in Ga 1−x Mn x As.

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Section: Methodsmentioning

confidence: 99%

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductorGa1−xMnxN

et al. 2005

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“…Reports of ͑Ga,Mn͒N epilayers synthesized in cubic and hexagonal crystal structures, of p-type and n-type ferromagnetic ͑Ga,Mn͒N, and of multiple ferromagnetic phases in one material all add to the complex phenomenology of these wide-gap DMSs ͑Korotov et al, 2001;Graf et al, 2002;Graf, Gjukic, et al, 2003;Arkun et al, 2004;Edmonds, Novikov, et al, 2005;Hwang et al, 2005;Sawicki, Dietl, et al, 2005͒. Uncertainties apply also to the interpretation of ferromagnetism seen in the ͑Ga,Mn͒P samples studied to date, which have been prepared by post-MBE ion implantation of Mn followed by rapid thermal ͑Theodor-opoulou et al., 2002;Poddar et al, 2005͒ or pulse-lasermelting annealing ͑Scarpulla et al, 2005͒. Experiments in these materials have not yet established unambiguously the nature of magnetic interactions in the ͑III, Mn͒P compounds.…”

Section: B Search For High Transition Temperaturesmentioning

confidence: 99%

Theory of ferromagnetic (III,Mn)V semiconductors

et al. 2006

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The body of research on ͑III,Mn͒V diluted magnetic semiconductors ͑DMSs͒ initiated during the 1990s has concentrated on three major fronts: ͑i͒ the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ͑ii͒ the materials science of growth and defects, and ͑iii͒ the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, ͑Ga,Mn͒As and several other ͑III,Mn͒V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In ͑III,Mn͒V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple ͑III,Mn͒V epilayers, with the main emphasis on ͑Ga,Mn͒As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173 K in ͑Ga,Mn͒As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for ͑III,Mn͒V DMSs is a central question in the field and motivates many of the analyses presented in this review.

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“…The FM in GaMnN film could be due to RudermanKittel-Kasuya-Yosida (RKKY)/Zener indirect exchange interaction by itinerate holes (hole mediated) based on mean field approximation [3]. Doping with the shallow Mg acceptor has enhanced the FM of GaMnN films [7]. The exchange interaction between Mn ions and holes would result in ferromagnetic behavior of the GaMnN film.…”

Section: Introductionmentioning

confidence: 98%

“…The exchange interaction between Mn ions and holes would result in ferromagnetic behavior of the GaMnN film. To increase the hole concentration and hence saturation magnetization of the GaMnN film, various schemes have been used [7][8] 1.5 and 2.0 eV [8][9][10][11][12]. Deep acceptor bands result in insulating GaMnN films that makes difficult to realize GaMnN based ferromagnetic semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

et al. 2009

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We report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (M s ) was observed. M s was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (X p ) were grown on sapphire substrates. We have demonstrated that the FM depends on the X p and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (t GaMnN ) for t GaMnN >200 nm and decreases for t GaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing X p and t GaMnN in the GaMnN i-p-n structures.

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Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface

Cited by 34 publications

References 5 publications

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductorGa1−xMnxN

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductorGa1−xMnxN

Theory of ferromagnetic (III,Mn)V semiconductors

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

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