Dependency of InAs QDs using GaxIn1−xAs second cap layer in the double-cap procedure

Abstract

We have successfully demonstrated the GaxIn1-xAs cap layer dependence on the self assembled StranskiKrastanov (S-K) InAs quantum dots (QDs) using double-cap procedure and MOVPE selective area growth. IntroductionConcerning the application of QDs to laser, one of the problems of self-assembled QDs is low gain due to the small active layer volume. For a solution of this problem, multiple stacked QD structure was proposed. In this study, we show the comparison of QDs size and optical properties between two samples of InAs QDs on InP substrates changing the Ga composition of GaxIn1-xAs cap layer during the double-cap procedure.