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More than 400nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs. IntroductionA broadband infrared semiconductor light sources is desirable for many applications, such as a wavelength division multiplexing system, infrared spectroscopy, sensing, metrology, and testing. To obtain a broadband emission of light, the wideband energy distribution of a semiconductor material is necessary. In the previous report [1], we have obtained a wideband electro luminesence from InAs/InP QDs using doublecap procedure [2] and selective MOVPE growth. By using a narrow stripe arrayed mask with a wide mask at one side of the array, we have controlled the emission wavelength in each array waveguide. And we have attempted to control the height of the QDs vertically by changing the cap layer thickness during the double-cap procedure. To obtain further broadband luminescence, we have controlled the strain under the QDs by changing the Ga composition of Ga x In 1-x As buffer layer.

We have successfully demonstrated the GaxIn1-xAs cap layer dependence on the self assembled StranskiKrastanov (S-K) InAs quantum dots (QDs) using double-cap procedure and MOVPE selective area growth. IntroductionConcerning the application of QDs to laser, one of the problems of self-assembled QDs is low gain due to the small active layer volume. For a solution of this problem, multiple stacked QD structure was proposed. In this study, we show the comparison of QDs size and optical properties between two samples of InAs QDs on InP substrates changing the Ga composition of GaxIn1-xAs cap layer during the double-cap procedure.