Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering

The effect of seed layer on morphology of ZnO nanorod arrays grown by hydrothermal method

“…We believe the poor orientation and crystallization of the nucleuses are responsible for the bad alignment of nanorods in the final deposits. Studies have explored the influence of oxygen partial pressure on the structure of ZnO films deposited by RF magnetron sputtering [16]. It was indicated that when the working pressure was kept constant, the growth behavior of the ZnO thin film was mainly decided by the density of oxygen in the space where the sample was deposited, and the crystallization of the ZnO thin films was promoted by desirable argon/oxygen ratio.…”

“…Although the influences of growth conditions in hydrothermal method such as growth temperature, deposition time and the concentration of the precursors on the morphology and the alignment of ZnO nanorod arrays have been demonstrated [15], and the characteristics of ZnO thin films prepared by magnetron sputtering with different parameters have been widely studied [16], to our best knowledge, the effect of seed layers prepared under different sputtering parameters on the morphology of ZnO nanorod arrays prepared by two-step hydrothermal method has never been investigated yet. In this study, highly oriented ZnO nanorods were successfully synthesized on various sputtered ZnO seed layers through aqueous solution method at low temperature.…”

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

“…This is because there are a lot of defects and impurities in the films with poor crystalline quality to cause exciton quenching and a low exciton density for insufficient O2 or excessive O2 [109]. The ZnO:Ga thin films produced at a low oxygen flow rate contain more oxygen vacancy defects [108]. When the oxygen flow rate increases, the VO defects reduce and the VZn defects increase, resulting in transition inhibition The intensity of luminescence peak of ZnO:Ga scintillation films varies with the O 2 /Ar ratio, the chemical ratio of Zn to O in ZnO:Ga films depends on oxygen content, and the concentration of various intrinsic defects in the films is also affected by oxygen content [107].…”

“…Researchers believe that the emission intensity of violet light and green light first increase and then decrease with the enhancement of oxygen partial pressure [96,108]. This is because there are a lot of defects and impurities in the films with poor crystalline quality to cause exciton quenching and a low exciton density for insufficient O 2 or excessive O 2 [109].…”

Effect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process

“…ZnO-based oxide semiconductors have been prepared by various methods such as chemical vapor deposition, 16 rf sputtering, 17 pulsed laser deposition, 6 and solution processing. [18][19][20] Vacuum-processed devices exhibit better performance and higher reliability as compared with solution-processed devices.…”