Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

Chiu, Kuan-Hsun; Chen, Jiann-Heng; Chen, Hong-Ren; Huang, Ruey‐Shing

doi:10.1016/j.tsf.2006.12.181

Cited by 75 publications

(46 citation statements)

References 7 publications

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“…The evolution of preferred AlN orientation with the N 2 pressure has been discussed a lot in AlN deposition by sputtering [25][26][27]. The N 2 pressure and Ar + sputtering yield are two factors that mainly affect the film preferred orientation in sputtering.…”

Section: Discussion On Evolution Of Preferred Orientation and Growth mentioning

confidence: 99%

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

et al. 2011

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Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N 2 ) environment. The AlN preferential orientation changes from (002) to (100) with increasing N 2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N 2 pressure.

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Section: Discussion On Evolution Of Preferred Orientation and Growth mentioning

confidence: 99%

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

et al. 2011

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“…AlN is a dielectric material with a wide direct band gap of about 6 eV [1][2][3], which stands out among the oxides, carbides and nitrides with good thermal conductivity of about 285 W·m −1 ·K −1 [4]. A set of properties that represent this film material makes it appropriate for a wide range of applications in the technology of electronic materials [5][6][7][8][9][10]. Encouraging opportunities that entail the development of an efficient synthesis technology of AlN has led to numerous publications.…”

Section: Introductionmentioning

confidence: 99%

The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

Choduń

Nowakowska-Langier

Okrasa

et al. 2016

Materials Science-Poland

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This work presents the very first results of the application of plasma magnetic filtering achieved by a coil coupled with an electrical circuit of a coaxial accelerator during the synthesis of AlN thin films by use of Impulse Plasma Deposition method (IPD). The uniqueness of this technical solution lies in the fact that the filter is not supplied, controlled and synchronized from any external device. Our solution uses the energy from the electrical circuit of plasma accelerator. The plasma state was described on the basis of OES studies. Estimation of the effects of plasma filtering on the film quality was carried out on the basis of characterization of structure morphology (SEM), phase and chemical composition (vibrational spectroscopy). Our work has shown that the use of the developed magnetic self-filter improved the structure of the AlN coatings synthesized under the condition of impulse plasma, especially by the minimization of the tendency to deposit metallic aluminum droplets and columnar growth.

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“…AlN is a dielectric material with a direct band gap of about 6 eV [1][2][3] and has a very good thermal conductivity of 285 Wm −1 ·K −1 [4]. The combination of these features clearly classifies this material for applications in optoelectronics and electronics [5][6][7][8][9][10][11][12]. It should be noted that AlN also has superior anticorrosive [13,14] and anti-wear [15,16] properties.…”

Section: Introductionmentioning

confidence: 99%

Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

Choduń

Nowakowska-Langier

Zdunek

2015

Materials Science-Poland

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Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

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Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

Cited by 75 publications

References 7 publications

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

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