2007
DOI: 10.1016/j.matchemphys.2007.02.020
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Deposition of diamond-like carbon film using dense plasma focus

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Cited by 37 publications
(15 citation statements)
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“…But the detailed analysis of the structure and properties of ZrC films formed at low substrate temperatures are still required. Unlike the techniques mentioned, ion beam-assisted deposition using plasma focus device can deposit solid films on conventional materials at near room temperature [12][13][14][15][16]. Energetic ion bombardment with higher ion flux may provide additional energy to enhance film formation and surface modification processes, so that some compounds and metastable phases can be formed at room temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…But the detailed analysis of the structure and properties of ZrC films formed at low substrate temperatures are still required. Unlike the techniques mentioned, ion beam-assisted deposition using plasma focus device can deposit solid films on conventional materials at near room temperature [12][13][14][15][16]. Energetic ion bombardment with higher ion flux may provide additional energy to enhance film formation and surface modification processes, so that some compounds and metastable phases can be formed at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…It is an excellent and powerful device for the generation of X-rays, neutron, relativistic electron and energetic ion beams [12,18]. The energetic ion beams emitted from the plasma focus device have been used for a variety of applications like surface properties modification, thin film deposition, ion assisted coating and ion implantation [12][13][14][15][16]19,20]. Due to heating of specimen by the energetic ions beams emitted from focus region, separate heating of specimen during the implantation can be avoided.…”
Section: Introductionmentioning
confidence: 99%
“…As mentioned earlier, the plasma focus device has been recently used for various thin films deposition and as a source of high energy ions for material processing. Rawat et al [21] used a 3.3 kJ plasma focus device to deposit the TiN thin films on the stainless steel substrates, Zakaullah et al [26] applied a 1.45 kJ dense plasma focus device to deposit the diamond-like carbon films on the silicon substrates, Lee et al [25] took advantage of a 2.3 kJ plasma focus device for ion implantation of nitrogen on the titanium substrates to synthesize the titanium nitride coatings. In this experiment, different axial distances from the anode tip and also various angular positions at the distance of 5 cm from the top of the anode have been used to deposit the chromium thin films.…”
Section: Introductionmentioning
confidence: 99%
“…There are many novel processes that a DPF can be developed for by utilizing the ion and electron product, especially when it involves the synthesis or processing of materials instead of a source of radiation [3]. The DPF device has proven to be able to synthesize a variety of materials such as titanium carbide [4], titanium nitride [5]- [8], titanium oxycarbide [9], titanium dioxide [10], cobalt platinum (CoPt) [11], iron cobalt (FeCo) [3], diamond-likecarbon (DLC) [12], [13], tungsten nitride [14], lead zirconate titanate [15], silicon carbide [16], [17], and hafnium oxide [18] by selecting the appropriate working gas and anode material. These nanostructured thin films are easily formed due to the ablation of the anode material by the electron beam resulted from the pinch and through the mixing of the ionized gas derived from hot dense plasma in focus device.…”
mentioning
confidence: 99%
“…These nanostructured thin films are easily formed due to the ablation of the anode material by the electron beam resulted from the pinch and through the mixing of the ionized gas derived from hot dense plasma in focus device. The advantage of the DPF in nanostructured thin-film synthesis is due to its flexibility in using any type of gas whether it be reactive or inert (such as argon, neon, hydrogen, nitrogen, acetylene, and oxygen [4], [5], [11]- [14]) any type of metal/conductive target material for anode (Ti [4]- [6], [10], graphite [12], [13], CoPt [11], FeCo [3], and W [14]) and film thickness can easily be varied through the number of deposition shots [2]- [4], [10]- [14].…”
mentioning
confidence: 99%