Deposition of GaN films on crystalline rare earth oxides by MOCVD

Leathersich, Jeff; Arkun, Erdem; Clark, Andrew; Suvarna, Puneet; Marini, Jonathan; Dargis, Rytis

doi:10.1016/j.jcrysgro.2014.04.015

Cited by 12 publications

(6 citation statements)

References 13 publications

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“…This is the upper region as indicated in figure 8. An early indication was that the oxide was modified by the III-N process (14). As shown in the Xray diffraction (Fig.…”

Section: Design and Growth Of Iii-n Epilayermentioning

confidence: 94%

Novel Oxide Buffer for Scalable GaN-on-Silicon

Clark¹,

Dargis²,

Arkun³

et al. 2014

ECS Trans.

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An alternative approach for growing GaN-on-Si using a hybrid epitaxial process, in which the rare-earth oxide buffer is first optimized with the template then used in a standard upstream MOCVD epitaxial process, is demonstrated. Using a rare earth oxide as the buffer layer the most obvious benefit is the spatial separation of the GaN from the silicon which removes one of the key breakdown paths. The oxide epitaxial process is robust and scalable to 200 mm diameter wafers. Combining oxides with different lattice spacings into ternary alloys enables the formation of graded and stacked layers starting from a lattice coincident material at the silicon surface to an upper surface that is now only 9% mismatched from GaN, as opposed to 17% for GaN on silicon. The suitability of the oxide within an MOCVD process has been demonstrated by the growth of bulk GaN using a standard sapphire like process.

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“…This is the upper region as indicated in figure 8. An early indication was that the oxide was modified by the III-N process (14). As shown in the Xray diffraction (Fig.…”

Section: Design and Growth Of Iii-n Epilayermentioning

confidence: 94%

Novel Oxide Buffer for Scalable GaN-on-Silicon

Clark¹,

Dargis²,

Arkun³

et al. 2014

ECS Trans.

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“…[3][4][5][6] Generally, metal-organic chemical vapor deposition (MOCVD) technology has the advantages of large epitaxial area, good reproducibility, accurate composition control and high deposition rate, which provides an economical and effective way for the production of semiconductor thin film materials. [7][8][9][10][11] To date, traditional research on AlGaN-MOCVD growth has been based either on a two-dimensional model [12][13][14] or the model of a small reactor. [15][16][17][18][19][20] Due to the great potential for development of AlGaN film , large-capacity reactors and that uniformity of growth rate and substrate thickness are required.…”

Section: Introductionmentioning

confidence: 99%

Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth

An,

Dai,

Liu

et al. 2023

Preprint

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Commercially, metal organic chemical vapor deposition (MOCVD) is a typical and effective approach to the AlGaN film growth. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for the film. However, problems such as low growth rate and poor crystallization quality are common in the growing process. Considering the process conditions, such as operating pressure, gas flow rate and rotation speed, and to ensure the uniformity of growth rate and substrate thickness, a new high-temperature reactor is proposed in this paper. The process parameters were optimized by CFD simulation and the finite element analysis was conducted on the temperature field, pressure field, velocity field, density field and other physical fields. These conditions make the flow field in the reactor stable and ensure the thickness uniformity of the deposited films. These research not only provide an effective solution for high quality MOCVD AlGaN growth, but also provide a theoretical basis for experiments and equipment improvement that follows.

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“…GaN-based III-V compound semiconductor thin films are important third-generation semiconductor materials, which are widely used in the manufacture of blue-violet light-emitting diodes, semiconductor lasers and high-frequency, high-power electronic equipment [1][2][3][4][5][6]. Metal-organic chemical vapour deposition (MOCVD) is an important technology for growing GaN thin films due to its advantages such as the large epitaxy area, good reproducibility and high deposition rate [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Fei

et al. 2018

R. Soc. open sci.

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Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

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Deposition of GaN films on crystalline rare earth oxides by MOCVD

Cited by 12 publications

References 13 publications

Novel Oxide Buffer for Scalable GaN-on-Silicon

Novel Oxide Buffer for Scalable GaN-on-Silicon

Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

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