Deposition of Hydrogenated Amorphous Silicon  under Intermittent Substrate Bias

Sakikawa, Nobuki; Shishida, Yoshinori; Miyazaki, Seiichi; Hirose, Masataka

doi:10.1143/jjap.37.l774

Cited by 4 publications

(4 citation statements)

References 17 publications

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“…In this study, the attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy is used to analyze the thin deposition films on the chamber wall [7][8][9]. Recently, Godfrey et al installed an ATR prism on the chamber wall of inductively coupled plasma (ICP) source to monitor the growth of a silicon oxychloride film on the prism [10].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching

Tanaka

Shiraishi

2013

e-J. Surf. Sci. Nanotechnol.

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To assure the repeatability of the gate etching process, in situ plasma cleaning is used to remove the depositions on the chamber wall. We studied the mechanism of deposition and cleaning of silicon containing films on the chamber wall formed during silicon etching using the attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). During the silicon etching with a Cl2/O2 plasma, a silicon-oxychloride film grows on the chamber wall due to the oxidation of the etch products. In the growth of the deposition films, the oxygen gas plays a key role. In a pure Cl2 plasma the deposition is removed even while the silicon etching is proceeding on the wafer. It was also found that the deposition rate is square proportional to the O2 gas flow rate. A simple kinetic model that attributes the square dependence to the consecutive oxidations of the two adjacent dangling bonds of a silicon atom has been described. Then the in situ cleaning of silicon-oxychloride with SF6 plasma was investigated with regard to the cleaning rate. Although oxygen gas is often added to the cleaning gas so as to remove commonly seen residues such as carbon or sulfur, there is a concern that oxidation may reduce the cleaning rate. It was confirmed that an oxygen addition of 30 sccm to the SF6 gas of 150 sccm causes insignificant effect. Further study to increase the cleaning rate revealed that lower pressure and larger total gas flow rate are effective. The effect of pressure is understood combined with the change in the plasma density. On the other hand, the total gas flow rate changes the density of etch products near the chamber wall. It was confirmed that the total gas flow rate does not change the etching rate of silicon-oxychloride on the wafer as it lies near the stagnation point of the gas flow.

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Section: Introductionmentioning

confidence: 99%

Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching

Tanaka

Shiraishi

2013

e-J. Surf. Sci. Nanotechnol.

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“…Due the a-Si:H low deposition temperature, the researches have dealt with high density of defect problems (4). Therefore, defect density studies have been accomplished for the lowering of this density by varying deposition parameter (5), using different deposition techniques (6,7) and further films treatments after deposition (8) in addition of studies of other materials (9).…”

Section: Introductionmentioning

confidence: 99%

a-Si:H Thin Films Deposited at Low Temperature by Sputtering

Nunes¹,

Zambom²,

Mansano

2010

ECS Trans.

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a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.

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“…There exist important contributions of ions to the growth of a-Si:H and mc-Si films. [10][11][12][13][14][15][16] Substrate bias is a beneficial method for controlling the flux and energy of ions impinging on the growing surface. A moderate substrate bias increases the crystallinity and reduces the incubation layer thickness.…”

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confidence: 99%

“…Several studies have been conducted to clarify the effects of the substrate bias on a-Si:H and mc-Si depositions. [10][11][12][13][14][15][16] However, the results from these studies led to controversial conclusions regarding the effect of ion bombardment. A negative substrate bias was reported to increase the crystalline size and to reduce the incubation layer thickness of the mc-Si films.…”

mentioning

confidence: 99%

Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias

Furuta

Hiramatsu

Hirao

2010

Jpn. J. Appl. Phys.

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Microcrystalline silicon (µc-Si) films were deposited by inductively coupled plasma chemical vapor deposition with a low-frequency and low-duty pulse substrate bias (PSB). The crystallinity of the films was significantly improved by the PSB. In the case of the low-frequency and low-duty PSB, the duty ratio affected the crystallinity more than the negative peak voltage. Cross-sectional transmission electron microscopy measurements revealed that the nucleation density at the µc-Si/glass interface was increased by the PSB. This technique will be useful in fabricating high-performance bottom-gate µc-Si thin-film transistors for large-area electronics.

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Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias

Cited by 4 publications

References 17 publications

Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching

Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching

a-Si:H Thin Films Deposited at Low Temperature by Sputtering

Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias

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