Design and characterization of RF MEMS capacitive shunt switch for X, Ku, K and Ka band applications

Sharma, Kuldeep; Karmakar, Ayan; Prakash, Krishna; Chauhan, Ashish; Bansal, Shonak; Hooda, Manish; Kumar, Sanjeev; Gupta, Neena; Singh, Arun K.

doi:10.1016/j.mee.2020.111310

Cited by 15 publications

(4 citation statements)

References 17 publications

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“…The metal-to-metal contact requires good ohmic contact between two metal electrodes, whereas capacitive coupling switches have a thin dielectric film and an air gap between two metal electrodes. However, the above-mentioned contact topologies both suffer long-term reliability issues, thereby limiting their practical use in commercial applications [10,11]. For example, the issues include the dielectric charging due to large contact areas in capacitive coupling switch [12], and the stiction due to low restoring spring force in the metal contacting switches [13].…”

Section: Introductionmentioning

confidence: 99%

Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Zhu

Pal²

2021

Micromachines

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In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

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Section: Introductionmentioning

confidence: 99%

Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Zhu

Pal²

2021

Micromachines

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“…The MEMS switches are classified on the basis of mechanical structure, actuation method, circuit configuration, and contact type [108]. The different mechanical structures such as cantilever, clamped-clamped, and diaphragm structures are the most utilized structures [109,110].…”

Section: Types Of Mems Switchesmentioning

confidence: 99%

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

Kurmendra,

Agarwal

2024

Micromachines

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Micro-Electro-Mechanical System (MEMS) switches have emerged as pivotal components in the realm of miniature electronic devices, promising unprecedented advancements in size, power consumption, and versatility. This literature review paper meticulously examines the key issues and challenges encountered in the development and application of MEMS switches. The comprehensive survey encompasses critical aspects such as material selection, fabrication intricacies, performance metrics including switching time and reliability, and the impact of these switches on diverse technological domains. The review critically analyzes the influence of design parameters, actuation mechanisms, and material properties on the performance of MEMS switches. Additionally, it explores recent advancements, breakthroughs, and innovative solutions proposed by researchers to address these challenges. The synthesis of the existing literature not only elucidates the current state of MEMS switch technology but also paves the way for future research avenues. The findings presented herein serve as a valuable resource for researchers, engineers, and technologists engaged in advancing MEMS switch technology, offering insights into the current landscape and guiding future endeavors in this rapidly evolving field.

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“…Nowadays, the theory of RF MEMS switches has obtained rapid development. Many designs have achieved better isolation at large bandwidth but at a cost of a high pull-down voltage of 10-40V [5][6][7][8][9][10][11][12][13][14][15][16]. The electrostatic drive switches are hard to integrate into CMOS chip systems reason of high actuation voltages.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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This paper presents a novel radio frequency micro-electro-mechanical systems (RF MEMS) switch fabricated on a high resistivity silicon substrate. Slots, like square interleaved slots and split-ring slots, are used in the transmission-line to get better RF performance. Comparing three switch structures with different slot cells, the switch with square interleaved slots is suitable at Ka-band (26 ~ 40GHz), but the switch with split-ring slots can be applied to RF circuits at 10-60GHz. The switch with split-ring slots is optimal for the switching mechanism in diverse 5G RF circuitry. When it works at 30GHz, it shows a low insertion loss better than − 0.256dB, a low re-turn loss better than − 22dB, and the isolation is observed below − 39dB. Its “pull-down” voltage is 6.5V. Due to its outstanding performance, the proposed RF MEMS switch is suitable for various applications.

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Design and characterization of RF MEMS capacitive shunt switch for X, Ku, K and Ka band applications

Cited by 15 publications

References 17 publications

Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

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