Design and Evaluation of Basic Analog Circuits in an Emerging MuGFET Technology

Knoblinger, G.; Kuttner, F.; Marshall, Andrew; Ruß, Christian; Haibach, P.; Patruno, P.; Schulz, T.; Xiong, Wade; Gostkowski, Michael L.; Schruefer, K.; Cleavelin, C.R.

doi:10.1109/soi.2005.1563526

Cited by 27 publications

(12 citation statements)

References 3 publications

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“…Fig 6 shows the schematic of the inverting Miller OpAmp. This analog block was fabricated and measured by G. Knoblingerl et al [51]. FinFETs and circuit have the following parameters: L= 250 nm; H FIN = 88 nm; W FIN = 55 nm; the circuit contains a resistance R=100 k and a capacitor C= 2 pF.…”

Section: D) Sddgmmentioning

confidence: 99%

Review on double-gate MOSFETs and FinFETs modeling

et al. 2013

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Section: D) Sddgmmentioning

confidence: 99%

Review on double-gate MOSFETs and FinFETs modeling

et al. 2013

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“…The feasibility of digital and analog multi-gate circuits has already been proven, (Knoblinger et al, 2005;Pacha et al, 2006). But these circuits do not take advantage of special multi-gate device features, as discussed in this section.…”

Section: Analog Device Properties and Impact On Circuit Designmentioning

confidence: 99%

Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects

Fulde¹,

Engelstädter

Knoblinger

et al. 2007

Adv. Radio Sci.

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Abstract. Multi-gate FET, e.g. FinFET devices are the most promising contenders to replace bulk FETs in sub-45 nm CMOS technologies due to their improved sub threshold and short channel behavior, associated with low leakage currents. The introduction of novel gate stack materials (e.g. metal gate, high-k dielectric) and modified device architectures (e.g. fully depleted, undoped fins) affect the analog device properties significantly. First measurements indicate enhanced intrinsic gain (gm/gDS) and promising matching behavior of FinFETs. The resulting benefits regarding the speed-accuracy-power trade-off in analog circuit design will be shown in this work. Additionally novel device specific effects will be discussed. The hysteresis effect caused by charge trapping in high-k dielectrics or self-heating due to the high thermal resistor of the BOX isolation are possible challenges for analog design in these emerging technologies. To gain an early assessment of the impact of such parasitic effects SPICE based models are derived and applied in analog building blocks.

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“…For future System-on-Chip solutions, it is very important to realize basic analog building blocks using FinFETs. Among analog modules, the performance of a Miller op-amp and a band-gap reference using FinFET has already been reported [9]. Most of the analog building blocks are used in wireless communication systems and hence require a low power technology that enables analog/RF and digital blocks on the same chip [10], [11].…”

Section: Introductionmentioning

confidence: 99%

A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Shrivastava

Baghini

Sachid

et al. 2008

IEEE Trans. Electron Devices

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Abstract-In this paper, we propose a novel and robust approach for common mode feedback (CMFB) for a differential amplifier using independently driven double gate (IDDG) FinFET technology. The performance of a differential amplifier with and without the proposed CMFB scheme is compared using 2-D mixed mode device and circuit simulations. It is shown from extensive simulation results that it is possible to achieve a common mode rejection ratio of 90 dB with improved performance in terms of area, power, and bandwidth even in the presence of process variations. Stability analysis shows that the proposed CMFB scheme does not need any compensating network. The idea is validated using extensive mixed-mode circuit simulations on IDDG FinFET circuits in sub-45-nm node technologies.Index Terms-Common mode feedback (CMFB), FinFET, independently driven double gate (IDDG), mixed signal.

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Design and Evaluation of Basic Analog Circuits in an Emerging MuGFET Technology

Cited by 27 publications

References 3 publications

Review on double-gate MOSFETs and FinFETs modeling

Review on double-gate MOSFETs and FinFETs modeling

Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects

A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

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