Design and synthesis of new photoresist materials for ArF lithography

Abstract

ABSTRACT:A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers was developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether and maleic anhydride alternating copolymers with acrylate derivatives containing bulky alicyclic acid-labile protecting groups. The resulting polymers showed good control of polymerization and high transmittance. Also, these resists exhibited good adhesion to the substrate, high dry-etching resistance against CF 4 mixture gas (1.02 times the etching rate of deep UV resist), and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120-nm L/S patterns were resolved under conventional illumination.

Synthesis of micro-crosslinked adamantane-containing matrix resins designed for deep-UV lithography resists and their application in nanoimprint lithography

“…15,20 However, PMMA has some drawbacks, such as low sensitivity, poor dry etching resistance and poor line edge roughness (LER) in images. 17–29…”

“…15,20 However, PMMA has some drawbacks, such as low sensitivity, poor dry etching resistance and poor line edge roughness (LER) in images. [17][18][19][20][21][22][23][24][25][26][27][28][29] Accordingly, numerous studies have been devoted to improving the relevant properties of PMMA photoresists and some interesting results have been achieved. The refractive index of the resist can be improved by adding sulfur element.…”

Design, synthesis, and photosensitive performance of polymethacrylate‐positive photoresist‐bearing o‐nitrobenzyl group

“…It also has a decisive impact on photoresist performances . The regular photoresist resin systems include acrylic acid and acrylic esters, polycyclic olefin polymer, cyclic olefin, and maleic anhydride copolymer, vinyl ether, and maleic anhydride copolymer, polycyclic olefin ring–opening polymer, multicopolymer. Among them, acrylic esters system was widely used as it has a better resolution, sensitivity, and adsorptive property.…”

Synthesis and characterization of chiral polyacrylates and their applications as positive tone photoresists

“…In the early days of research on 193 nm resists, the focus was mainly on acrylic polymers 4, 5. To improve the resistance of polymers against etching and hydrophilicity, many polymers with cyclic structures, such as cyclo‐olefin‐ co ‐maleic anhydride (COMA), cyclo‐olefin copolymer, and COMA‐ co ‐acrylate were developed 6–11. However, these polymers were not easily synthesized.…”