Design Considerations for High Performance RF Cores Based on Process Variation Study

Upadhyaya, Shambhu; Venugopal, Nandakumar; Shastry, Nihal; Gopalakrishnan, Srinivasan; Kuppuswamy, Bharath V.; Bhowmick, Rana; Mayor, P.

doi:10.1007/s10836-007-5019-1

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2010

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“…Statistical uncertainty arising from sub-wavelength lithography, diffusion process, and uneven oxide thickness translate to variations in electrical parameters such as gate length, sheet resistance, threshold voltage, and gate capacitance. Non uniform deposition and diffusion of impurities translate to variations in threshold voltage [3] [4].…”

Section: Introductionmentioning

confidence: 99%

Process variation compensation of a 4.6 GHz LNA in 65nm CMOS

Mukadam

Filho

Zhang

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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We present the design of a 4.6 GHz LNA in TSMC 65nm with a feedback scheme to compensate for variations across process, supply voltage, and temperature. No post fabrication efforts are required in this compensation method. The proposed method improves the variation in S 21 of an inductively degenerated cascode LNA from 8.75% to 1.27%, which is a reduction in variation of 85%. The presented scheme is also robust over variations in supply voltage, temperature, and process conditions. The compensation method presented can be utilized to stabilize the gain of a wide variety of amplifiers.

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Section: Introductionmentioning

confidence: 99%