2014
DOI: 10.1016/j.mejo.2014.05.009
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Design, fabrication and characterization of miniature RF MEMS switched capacitor based phase shifter

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Cited by 34 publications
(10 citation statements)
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“…Where A is the contact area (120*100) µm2, ε 0 is the free space permittivity, g 0 is the initial gap when (V p = 0V), g is the gap spacing when V p is activated (0 < g < (2/3)g 0 ) and k z is the spring constant of the aluminum bridge which is is found in [20] by the equation (5). …”
Section: Simulation Of the Mechanical Characteristicsmentioning
confidence: 99%
See 1 more Smart Citation
“…Where A is the contact area (120*100) µm2, ε 0 is the free space permittivity, g 0 is the initial gap when (V p = 0V), g is the gap spacing when V p is activated (0 < g < (2/3)g 0 ) and k z is the spring constant of the aluminum bridge which is is found in [20] by the equation (5). …”
Section: Simulation Of the Mechanical Characteristicsmentioning
confidence: 99%
“…The figure 5 shows the simulation result of the deflection of the bridge at pull in voltage equal to 37.4 V. In the above obtained results, we observe that the RL of the classical RF MEMS does not have almost any values under -30 dB; but for the proposed resonator has the less return loss, than -30 dB is present in the bands . Also, in terms of frequencies bands, we have a significant single usable ultrawide band [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] for the proposed resonator in spite of two frequency bands [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29], [10][11][12][13][14][15][16][17][18]…”
Section: Simulation Of the Mechanical Characteristicsmentioning
confidence: 99%
“…The k z is given by Equation , where E is the Young modulus of aluminum, σ is the residual stress of the beam, and υ is the Poisson coefficient. kz=12()32italicEwtl3+8σ()1ϑw()tl …”
Section: Determination Of Optimum Parametersmentioning
confidence: 99%
“…Recently, SU-8 was used as a passivation layer to elevate a co-planar waveguide (CPW) transmission line for realising a low loss transmission line using a low resistivity silicon wafer (ρ˂100 Ω•cm) [15], [16]. Moreover, it has been reported in [3], [17] that SU-8 has been used for both lateral support for an RF MEMS switch as well as sacrificial layer. In this thesis, SU-8 is used as a base structure to elevate the proposed MEMS varactor from the silicon substrate which can reduce the parasitic and fringing field capacitance.…”
Section: Research Motivationmentioning
confidence: 99%
“…The typical operating frequency of the existing distributed MEMS transmission line (DMTL) phase shifters ranges from 8 GHz to 110 GHz [17], [53], [55], [57], [59].…”
Section: Proposed Dmtl Phase Shiftermentioning
confidence: 99%