Design of 6T SRAM Cell Using Optimized 20 nm SOI Junctionless Transistor

Noor, Muhammad Faris Md; Alias, Nurul Ezaila; Hamzah, Afiq; Johari, Zaharah; Peng, Michael Tan Loong

doi:10.1109/rsm46715.2019.8943541

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…With heavy ion incident NMOS1, there are two processes, recovery and feedback, in the process of changing the Q-node voltage from 1 to 0. Whether the stored information in the SRAM changes depends on the competition between the recovery time and feedback time [17]. The recovery time refers to the time for the transient drain current generated by heavy ion irradiation to recover to 0, and the feedback time refers to the time required for the QN node voltage to change due to the Q node voltage drop.…”

Section: Influencing Factors Of Flip Thresholdsmentioning

confidence: 99%

Research on heavy ion irradiation effects on SOI SRAM

Li,

Hao,

Zhao

et al. 2023

J. Inst.

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SRAM based on SOI devices has been widely used in aerospace storage devices due to its good electrical characteristics and radiation resistance. However, with the development of semiconductor technology, the feature size of devices continues to shrink, and the irradiation effects of high-energy ions have become increasingly serious. Single event effect has become the biggest threat to the failure of the spacecraft. A mixed-simulation method was used to research the heavy ion irradiation effects on SOI SRAM. SRAM consists of two coupled inverters. Firstly, the voltage changes of the inverter and SRAM output nodes under heavy ion irradiation were compared and analyzed, then the influence of the device itself and heavy ion parameters on the single particle flipping effect of the SRAM is investigated, and finally the necessary conditions for the flipping of the stored information in the SRAM are discussed and derived. The results show that heavy ion incidence does not permanently change the final state of the inverter; devices in the off state in the SRAM will undergo information flipping only when they are irradiated by heavy ions, and the threshold voltage of the N-type MOSFET is lower than that of the P-type MOSFET; an increase in the penetration depth will accelerate the flipping speed of the SRAM, but when the LET is high, the influence of the penetration depth on the flipping speed decreases; the change of the stored information in the SRAM is the result of the combined effect of pulse width and pulse height.

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Section: Influencing Factors Of Flip Thresholdsmentioning

confidence: 99%