Design of a 24-GHz CMOS VCO With an Asymmetric-Width Transformer

Yang, Jin Kyu; Kim, Choul‐Young; Kim, Dong-Wook; Hong, Songcheol

doi:10.1109/tcsii.2010.2043381

Cited by 78 publications

(7 citation statements)

References 9 publications

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“…3(a). 6,7) In this work, we exploit this phenomenon and introduces capacitor coupling to achieve quadrature operation and Gm 0 enhancement under higher frequency operation. Signals at the drain terminals are injected to the source terminals through capacitors C c .…”

Section: Topologymentioning

confidence: 99%

“…3(a)] is applied to provide extra voltage swings, and improved loaded quality factor for achieving low phase noise. 6,7) When the gate voltage is increased, the drain source voltages are decreased at the same time. The reduction of the source voltage effectively lowers the ground potential and allows the drain voltage to go to a negative potential before the transistor goes into the linear operating region.…”

Section: Transformer Feedback Techniquementioning

confidence: 99%

“…There are numerous papers published on the subject of a VCO. [3][4][5][6][7][8][9][10] Among them, the quadrature VCO (QVCO) has attracted attention since quadrature outputs are required to modulate/ demodulate the orthogonal signals in many fully-integrated RF transceivers with direct conversion architectures.…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5] In general, it is difficult to achieve sufficient negative conductance under low power-supply voltage. Thus, transformer feedback, 6,7) Class-C operation, 8,9) and body bias coupling techniques 10) have been reported. However, it is still a challenge to obtain sufficient transconductance Gm 0 of the LC-VCO at a high-microwave band.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Kamimura

Lee

Tanoi

et al. 2012

Jpn. J. Appl. Phys.

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A low power-supply voltage and high-frequency quadrature voltage-controlled oscillator (QVCO) using a combination of capacitor coupling and transformer feedback techniques is presented. The capacitor coupling technique can boost the transconductance of the LC-VCO core and coupling transconductance of QVCO at high frequency. Also, this technique can improve the quality factor of the QVCO at high frequency with low power-supply voltage, compared with the conventional QVCO. In addition, the capacitor coupling QVCO with transformer feedback can improve the quality factor of QVCO. Using this topology, the QVCO is able to operate at over 10 GHz with lower power-supply voltage. Implemented in the 90 nm complementary metal oxide semiconductor (CMOS) process, the proposed QVCO measures 1-MHz-offset phase noise of -94 dBc/Hz at 13 GHz while consuming 0.68 mW from a 0.1 V power-supply.

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Section: Topologymentioning

confidence: 99%

Section: Transformer Feedback Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Kamimura

Lee

Tanoi

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Because of the high-data-rate wireless communication in K band, the voltagecontrolled oscillators with operation frequencies in K band were reported [1,2,3,4,5,6]. In [7], a class-B VCO is designed to startup a class-C oscillator.…”

Section: Introductionmentioning

confidence: 99%

A new dual −<i>G</i><sub>m</sub> structure with Class-AB operation of low-power low-phase-noise K-band CMOS VCO

Wang

2014

IEICE Electron. Express

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A low-power low-phase-noise K-band CMOS VCO with dual negative conductance (!G m ) structure for class-AB operation is proposed in this paper. By utilizing the dual !G m structure, the negative conductance of the K-band VCO is effectively enhanced. Therefore, the severe startup condition for the K-band CMOS VCO can be alleviated, leading to reduced dc power consumption. Moreover, VCO cores operating in class-AB region exhibit enlarged voltage swings, resulting in an improved VCO phase noise. Based on the proposed architecture, the fabricated 0.18-µm CMOS VCO cores consume total 5.4-mW low dc power at 1.2-V supply voltage. At this bias condition, the measured phase noise is !106.15 dBc/Hz at 1-MHz offset from a 22.1-GHz carrier, the tuning range is 9.8%, and the output power is !7.1 dBm. Compared to the recently published K-band 0.18-µm CMOS VCOs, this work achieves low dc power consumption, low phase noise, and superior figure-of-merit (FOM).

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67 GHz three‐spiral transformer CMOS oscillator

Pepe¹,

Chlis

Zito

2016

Circuit Theory & Apps

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SUMMARYThis paper presents a 67GHz LC oscillator exploiting a three-spiral transformer and implemented in 65nm bulk complementary metal-oxide-semiconductor technology by STMicroelectronics. The three-spiral transformer allows operating with a lower voltage supply, still obtaining good phase noise performance, and achieving a compact design. Measured performances when supplied with 1.2 V are: oscillation frequency of 67 GHz, phase noise (PN) equal to À96 dBc/Hz at 1 MHz frequency offset from the carrier, power consumption (P C ) equal to 19.2 mW and figure of merit (FOM) equal to À179.7 dB/Hz. Measured performances when supplied with 0.6 V are: oscillation frequency of 67 GHz; PN equal to À88.7 dBc/Hz at a 1 MHz frequency offset from the carrier; P C equal to 3.6 mW and FOM equal to À179.7 dB/Hz.

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Design of a 24-GHz CMOS VCO With an Asymmetric-Width Transformer

Cited by 78 publications

References 9 publications

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

A new dual −<i>G</i><sub>m</sub> structure with Class-AB operation of low-power low-phase-noise K-band CMOS VCO

67 GHz three‐spiral transformer CMOS oscillator

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