2022 IEEE 4th International Conference on Circuits and Systems (ICCS) 2022
DOI: 10.1109/iccs56666.2022.9936160
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Design of a Bandgap Reference with Low Temperature Drift and High PSRR

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Cited by 6 publications
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“…Where V T = kT/q is the thermal voltage, k is the Boltzmann constant, q is the charge of an electron [8,9,10].…”
Section: Introductionmentioning
confidence: 99%
“…Where V T = kT/q is the thermal voltage, k is the Boltzmann constant, q is the charge of an electron [8,9,10].…”
Section: Introductionmentioning
confidence: 99%
“…To solve the problem of low voltage, Annema [6] used the dynamic threshold voltage MOS (DTMOS) instead of the general MOS tube to manufacture the reference source, so that the supply voltage is reduced to 0.85 V. Liu et al [7] proposed to adopt a charge pump circuit, which lifts the supply voltage through the charge pump and then supplies power to the circuit. The output reference size is 0.46 V, and the minimum supply voltage can reach 0.55 V. For portable devices using batteries, it is necessary to be able to work in a wide power supply voltage range and be stable [8].…”
Section: Introductionmentioning
confidence: 99%
“…By the feedback of operational amplifier, two bipolar transistors operate at unequal current densities. The difference between their base-emitter voltages is proportional to the absolute temperature, yielding the proportional to absolute temperature ( 𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃 ) [9][10][11][12][13][14][15]. Typically, the base-emitter voltage is expressed as follow.…”
Section: Introductionmentioning
confidence: 99%