Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

Saad, Paul; Fager, Christian; Cao, Haiying; Zirath, Herbert; Andersson, Kristoffer

doi:10.1109/tmtt.2010.2049770

Cited by 138 publications

(69 citation statements)

References 17 publications

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“…The same load at the fundamental frequency has been adopted for both stages. It has been chosen according to a classical design approach based on load-pull simulations across the amplifier bandwidth to extract a simplified output equivalent circuit of the device [10][11][12], eventually adopted for the synthesis of the output matching network.…”

Section: Design Strategy and Fabricationmentioning

confidence: 99%

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

et al. 2016

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Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 µm Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.

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Section: Design Strategy and Fabricationmentioning

confidence: 99%

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

et al. 2016

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“…To date, many impedance matching techniques have been thoroughly explored. In particular, multistage, low-pass topologies are often utilized for this task [7]- [15]. For instance, a synthesized Chebyshev low-pass filtering (LPF) matching network (MN) based on series transmission-lines and open-circuit stubs were used in a highly efficient broadband Class-E PA [8].…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Broadband Continuous Inverse Class-F Power Amplifier Design Using Modified Elliptic Low-Pass Filtering Matching Network

Yang

Xia

Guo

et al. 2016

IEEE Trans. Microwave Theory Techn.

142

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“…For wideband high-power amplifiers, many matching techniques have been used in previously published studies. They include reactive filter synthesis [2,3], distributed configurations [4,5] and resistive matching circuits [6,7]. Reactive filter synthesis has a limitation in extending the bandwidth of a power amplifier, and a distributed power amplifier has clear advantages in terms of its return loss and bandwidth but has disadvantages in requiring a large chip area for high gain and phase velocity tuning between input and output artificial transmission lines.…”

Section: Introductionmentioning

confidence: 99%

2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

Lee¹,

Bae²,

Kim³

2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the 0.25 mm GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

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Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

Cited by 138 publications

References 17 publications

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

Highly Efficient Broadband Continuous Inverse Class-F Power Amplifier Design Using Modified Elliptic Low-Pass Filtering Matching Network

2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

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