Design techniques to combat process, temperature and supply variations in Bluetooth RFIC

Abstract

A fully integrated Bluetooth RF transceiver with sensitivity up to 4 5 dBm with f2 dB process variation has been achieved. The sensitivity only varies fl dB from 2.7 to 3.3V and f1.5 dB from 4 0 to +90"C. This RFIC is fabricated using a 0.35" CMOS process and can withstand a maximum input power of +5 dBm for 0.1 % BER.

A -90 dBm sensitivity 0.13 μm CMOS bluetooth transceiver operating in wide temperature range

“…It is superior to a variation of 3dB in [3], and this is supposed to be because the proposed bias scheme considers the variation of the parasitic resistance of inductors due to temperature, though Ref. [3] considers only the variation of transistor g m . The sensitivity is −89.6dBm even at 90 o C. Suppression of VCO pulling is shown in Fig.…”

“…A current compensation technique to suppress this degradation has been reported on a 0.35µm CMOS transceiver at a power supply voltage more than 2.7V [3]. In this work, a 0.13µm CMOS receiver chain with a bias current synthesis scheme suppressing the sensitivity degradation due to PVT variations has been designed at a low power supply of 1.5V.…”