“…As such, Sb-terminated have started with clean, As-terminated (2×4)-GaAs represents the initial surface on which subsereconstructed surfaces that had been covered with quent heteroepitaxial layers are grown. multiple layers of Sb at low temperature and then Sb-terminated GaAs is also the starting surface annealed in vacuum to gradually desorb the Sb for the growth of self-assembled III-Sb quantum film [6,[9][10][11][12][13]. With increasing temperature, reflection high energy electron diffraction (RHEED)…”