1997
DOI: 10.1063/1.366475
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Desorption behavior of antimony multilayer passivation on GaAs (001)

Abstract: A systematic study of the desorption behavior of Sb multilayers applied as a passivant to ͑001͒ GaAs is presented. Reflection high-energy electron diffraction, reflectivity, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and thermal desorption data reveal unique and complementary information which can be used to monitor the progress of passivant desorption and substrate preparation for subsequent process steps. The data confirm that Sb acts as a robust barrier to surface contamination.

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Cited by 17 publications
(13 citation statements)
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“…Furthermore, the observed 1 Â 1 RHEED pattern that occurred when the T sub was decreased from 350 1C to 280 1C is often associated with an accumulation of Sb atoms. This deposit had begun to form a layer of bulk Sb on the GaAs surface [20].…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the observed 1 Â 1 RHEED pattern that occurred when the T sub was decreased from 350 1C to 280 1C is often associated with an accumulation of Sb atoms. This deposit had begun to form a layer of bulk Sb on the GaAs surface [20].…”
Section: Resultsmentioning
confidence: 99%
“…These samples were exposed to antimony overpressure at 295 3 C for reduced amounts of time. Antimony cap layers may be easily removed by thermal [27,22] or chemical means, and are often used as a passivation layer to prevent atmospheric contamination of samples during transfer between processing chambers. Neglecting to properly remove antimony layers (or lack of awareness of their existence on a sample) prior to additional processing may be detrimental to that processing and the final device.…”
Section: Resultsmentioning
confidence: 99%
“…As such, Sb-terminated have started with clean, As-terminated (2×4)-GaAs represents the initial surface on which subsereconstructed surfaces that had been covered with quent heteroepitaxial layers are grown. multiple layers of Sb at low temperature and then Sb-terminated GaAs is also the starting surface annealed in vacuum to gradually desorb the Sb for the growth of self-assembled III-Sb quantum film [6,[9][10][11][12][13]. With increasing temperature, reflection high energy electron diffraction (RHEED)…”
mentioning
confidence: 99%
“…In addition to forming an important faces is of interest for a variety of reasons. A interface in devices, Sb is also being considered number of novel III-Sb semiconductor-based for use on GaAs as a passivating surface film [6 ], electronic devices are under development [1], and and as a surfactant for heteroepitaxial growth many of these devices are fabricated on semi- [7,8]. insulating GaAs(001) substrates by molecular Previous studies of Sb-terminated GaAs(001) beam epitaxy (MBE ).…”
mentioning
confidence: 99%