Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition (DATE), 2015 2015
DOI: 10.7873/date.2015.0733
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DESTINY: A Tool for Modeling Emerging 3D NVM and eDRAM caches

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Cited by 105 publications
(61 citation statements)
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“…We modelled the area and power for the main accelerator SRAM bu↵ers, NBin and NBout using CACTI v5.3 [28]. The eDRAM energy was modelled with Destiny [30]. Table 4 reports the modelled characteristics of these memory elements.…”
Section: Methodsmentioning
confidence: 99%
“…We modelled the area and power for the main accelerator SRAM bu↵ers, NBin and NBout using CACTI v5.3 [28]. The eDRAM energy was modelled with Destiny [30]. Table 4 reports the modelled characteristics of these memory elements.…”
Section: Methodsmentioning
confidence: 99%
“…3D stacking technology enables modular integration of STT-RAM caches with minimal impact on processor design [114]. They evaluate several configurations where different levels of cache hierarchy are implemented in SRAM, STT-RAM etc.…”
Section: Techniques Related To Nvmsmentioning
confidence: 99%
“…They show that the outer-dies can shield more than 90% particle strikes for the innerdies which leads to a heterogeneous error rate across layers in a 3D chip. 3D integration also provides opportunities of heterogeneous integration, since different layers can be designed using different technologies [114]. Using this feature, the outer layer can be designed using Silicon-On-Insulator (SOI) technology which is more resilient to particle strikes.…”
Section: Effect Of 3d On Reliabilitymentioning
confidence: 99%
“…The retention period of eDRAM varies exponentially with the temperature [28], and hence, DESTINY scales the retention period accordingly to model the effect of the temperature. DESTINY provides the refresh latency, energy and power as the output of the tool.…”
Section: Edram Modelmentioning
confidence: 99%
“…Typically, a charged capacitor represents a "1", while a discharged capacitor represents a "0". Over time, eDRAM loses charge, and hence, it requires periodic refresh operations [28].…”
Section: Data Storage Mechanism Of Memory Technologiesmentioning
confidence: 99%