Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

Chai, Jessica; Noriega, O.C.; Dedigama, Aruna; Kim, J.J.; Savage, A.; Doyle, Kevin; Smith, Casey; Chau, Nguyen Thi Minh; Peña, José L.; Dinan, J. H.; Smith, David J.; Myers, T. H.

doi:10.1007/s11664-013-2650-8

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…The above described is shown in Figure 4, where is presented a X-ray diffraction curve of a typical 125 nm thick ZnTe layer, obtained performing 410 growth cycles on GaSb substrate. Additionally, the peak position of the layer is closer to the peak of substrate, considering the critical thickness of 275 nm on (100) GaSb reported by other authors 17 . As a result of the deconvolution treatment of the experimental curve can be observed the peak corresponding to the ZnTe layer near the dominant peak corresponding to the (004) diffraction plane of the GaSb substrate.…”

Section: Znte X-ray Diffraction Measurementssupporting

confidence: 81%

“…The lattice constants of the two materials are very close, a GaSb = 6.0959 Å and a ZnTe = 6.1034 Å. In addition, the interface defects and the nanometric thicknesses of the ZnTe layers are factors related to the full width at half maximum of the diffraction peak 17,18 . The above described is shown in Figure 4, where is presented a X-ray diffraction curve of a typical 125 nm thick ZnTe layer, obtained performing 410 growth cycles on GaSb substrate.…”

Section: Znte X-ray Diffraction Measurementsmentioning

confidence: 95%

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Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

et al. 2017

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This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nanolayers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm -1 . Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature.

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Section: Znte X-ray Diffraction Measurementssupporting

confidence: 81%

Section: Znte X-ray Diffraction Measurementsmentioning

confidence: 95%

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

et al. 2017

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“…To obtain high quality films with low dislocation densities, ZnTe epilayers can be grown on nearly lattice-matched II-VI GaSb and InAs substrates in a molecular beam epitaxy (MBE) system [20,21]. However, as a III-V material, GaAs with a greater lattice mismatch with ZnTe is a preferable substrate material due to its high quality, large wafer area, commercially availability, and low cost in comparison to GaSb [1,22].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

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Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 10 7 cm −2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

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MBE growth of high quality HgCdSe on GaSb substrates

Lei

Ren

Madni

et al. 2018

Infrared Physics & Technology

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Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

Cited by 5 publications

References 21 publications

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

MBE growth of high quality HgCdSe on GaSb substrates

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