Determination of the source of two extra components in Si 2p photoelectron spectra of the SiO2/Si(1 0 0 ) interface

Atomic Lineation of Products during Oxidation of Si(111)-7 × 7 Surface Using O2 at 300 K

“…The x in Si x + indicates the valence of oxygen atoms bonding to an Si atom. Si α and Si β describe α and β components normally observed in high-energy-resolution Si 2p photoelectron spectra. − It is clearly found that Si 4+ and Si α appear after enough progress of the oxidation.…”

“…It, however, remains even after enough oxidation. The remnant intensities should relate to Si α component due to oxidation. − The dose dependence of I L is analyzed by means of eq with two components I normalL = I normalS 1 + I Si normalα = I 0 · exp ( − k 1 · t ) + I sat · ( 1 − exp false( − k 2 · t false) ) where I S1 and I Si α are the intensities for S1 and Si α components, respectively. I 0 and I sat indicate the initial intensities of S1 and the saturated intensity of Si α .…”

Immediate Product after Exposing Si(111)-7×7 Surface to O2 at 300 K

“…The extra components are considered to originate from not only the components related to the surface species [38][39][40][41][42][43][44][45][46][47] but also the extra peaks induced by the oxidation. [48][49][50][51][52][53] Therefore, all Si 2p spectra in this study are analyzed using seven components (Si Bulk , Si 1þ , Si 2þ , Si 3þ , Si 4þ , Si , and Si ). Note that we mainly discuss the Si 1þ and Si 2þ oxidation states in this paper to understand the initial stage of oxidation.…”

Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(1 0 0) substrate near the interface

“…Here, the binding energy of Si 0 is equal to that of bulk Si and a-Si and b-Si were found to originate from the Si substrate [3,13,14]. The chemical shift (CS) of a-Si was found to be affected by its second-nearest-neighbor oxygen (O) atoms from the theoretical study [15].…”