Determination of valence band splitting parameters in GaN

Yamaguchi, Atsushi; Mochizuki, Yumi; Sunakawa, Hajime; Usui, Akira

doi:10.1063/1.367217

Cited by 58 publications

(41 citation statements)

References 18 publications

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“…This splitting allowed the energy separation between the first confined level of the HH subband (E HH1 ) and the first confined level of the CH subband (E CH1 ) to be calculated E HH1--CH1 = E HH1 --E CH1~1 27 meV [7]. This result was in good agreement with other published values [8]. The piezoelectric field effect is to increase the separation between E HH1 and E CH1 because the correction to E HH1 and E CH1 is proportional to their respective hole effective masses along the c-axis.…”

Section: Resultssupporting

confidence: 83%

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Florescu

Passman²,

Lu³

et al. 2002

phys. stat. sol. (c)

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This paper compares results from different sets of typical blue/green InGaN/GaN structures (MQWs, LEDs) grown in EMCORE's commercial reactors (EMCORE GaNzilla and SpectraGaN) on (0001) sapphire. Edge-emitting photoluminescence (PL) and electroluminescence (EL) were used to characterize representative samples from each set. The PL/EL state of polarization was investigated and compared to theoretical evaluations. Blue ($ 475 nm) structures exhibit strongest polarizations, up to a 3:1 TE to TM ratio. Green ($ 520 nm) structures exhibit smaller polarizations, about a 1.5:1 ratio. Polarization of luminescence in edge geometry also enables a clear distinction between quantum well (QW) and quantum dot (QD) cases in supperlattice structures. For the blue samples a QW-like behavior is observed since the TE mode dominates the TM mode 3:1. In contrast, for the green samples a mixed QW-QD behavior is suggested, as the TE : TM ratio drops to 1.5:1. PL/EL polarization fringes were also observed and a possible correlation with interfaces quality suggested. The implications of these results for high power optoelectronic and electronic devices will be addressed.Introduction The recent success in the field of nitride semiconductors research demonstrated that the nitrides are very different from the traditional III-V semiconductors [1]. The GaN based structures can extend optoelectronic devices into applications that require white light, by adding the blue/green components. The operating characteristics of these devices depend critically on the physical properties of the constituent materials and of the quality of quantum heterostructures. Some of the proposed optical applications of blue/green LEDs and lasers include: full color displays for computers and high definition television, airborne submarine surveillance systems, traffic lights, and Ultraviolet detectors [2]. In addition, GaN-based structures have considerable potential for high power electronic devices with improved performances, such as modulation doped field effect transistors, heterojunction bipolar transistors, etc. [3]. Also, it is well known that GaN, as well as other group-III nitrides are tetrahedrally coordinated and lack the inversion symmetry along the c-direction. Prime examples for the consequences of this anisotropy are the presence of a spontaneous electric polarization along the c-axis, a splitting of the valence bands, different refractive indices parallel and normal to the c-axis, and an optically polarized spontaneous emission even in the bulk. For GaN grown along the [0001] axis, access to these anisotropies can only be gained by measurements taken from the edge of the sample, or in edge-geometry.In this paper, we study the edge-emitting PL/EL from sets of typical blue and green MQW and LED structures grown in EMCORE's commercial reactors (EMCORE

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Section: Resultssupporting

confidence: 83%

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Florescu

Passman²,

Lu³

et al. 2002

phys. stat. sol. (c)

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“…The residual strain influences the spectrum of excitonic transitions [11][12][13][14][15], and, in our case, the spectrum is shifted by approximately 10 meV towards the higher energy region compared to the spectrum of a fully relaxed GaN layer [1,16,17]. The emission band at 3.55 eV is attributed to the emission from AlInN layer possibly associated with very large Stokes shifts of 0.4-0.8 eV observed near a composition range of 0.18 [18,19].…”

Section: Resultsmentioning

confidence: 73%

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

et al. 2011

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A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

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“…17 for hexagonal GaN. A pronounced peak in <ε 1 > and minimum in <ε 2 > at 3.40 eV marks the superposition of the A and B excitonic transitions at the fundamental band gap of GaN [18,19]. At the high-energy side of this peak a shoulder appears in <ε 1 > which is tentatively assigned to the C excitonic transition.…”

Section: Resultsmentioning

confidence: 95%

Composition Dependence of the Band Gap Energy of In_xGa_1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

Wagner

Ramakrishnan

Behr

et al. 1999

MRS Internet j. nitride semicond. res.

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We report on the composition dependence of the band gap energy of strained hexagonal In x Ga 1-x N layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by E G (x)=3.43-3.28⋅x (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

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Determination of valence band splitting parameters in GaN

Cited by 58 publications

References 18 publications

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Composition Dependence of the Band Gap Energy of In_xGa_1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

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Determination of valence band splitting parameters in GaN

Cited by 58 publications

References 18 publications

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

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Composition Dependence of the Band Gap Energy of In_xGa_1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition