Development and characterization of confocal sputtered piezoelectric zinc oxide thin film

Sharma, Pallavi; Güler, Zeynel; Jackson, Nathan

doi:10.1016/j.vacuum.2020.109930

Cited by 19 publications

(11 citation statements)

References 40 publications

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“…These results are in good agreement with recent experimental findings for ZnO NWs [32,36,[54][55][56] and ZnO thin films [38,[40][41][42] . In these reports, 𝑑 33 𝑒𝑓𝑓 has been estimated to be in the range of 2-15 pm/V (units equivalent to pC/N) for ZnO NWs, and between 2.5 to 8 pm/V for ZnO thin films.…”

Section: Comparison Between a Ving And A Thin Filmsupporting

confidence: 92%

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

Garcia¹,

Mouis²,

Cresti³

et al. 2022

J. Phys. D: Appl. Phys.

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ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. These nanowires are usually non-intentionally n-doped during their growth. The essential role of doping, surface traps and surface Fermi level pinning in the actual response of piezoelectric semiconductors has already been demonstrated. In order to go further, this paper investigates the influence of the density and of the dynamics of surface traps on such important parameters as the output generated potential and the effective piezoelectric coefficient. We implemented numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of ZnO nanowires array based nanocomposites (the so-called VING configuration) operated in compression. It was found that a certain amount of surface traps was required to obtain a usable generated output potential from the studied devices in the range of dimensions and doping level reported in most experimental results. Moreover, the surface traps influence was strongly dependent on their dynamics. As a first step towards the analysis of traps dynamics, we compared the two extreme cases of ultra-slow and ultra-fast traps. The symmetry and asymmetry of the piezoelectric response and a comparison to thin film was also discussed. This study demonstrates that the realistic modelling of the piezoelectric response of semiconductor based transducers should account for traps dynamics effects.

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Section: Comparison Between a Ving And A Thin Filmsupporting

confidence: 92%

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

Garcia¹,

Mouis²,

Cresti³

et al. 2022

J. Phys. D: Appl. Phys.

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“…The ZnO piezoelectric film sensor was fabricated on a GH4169 superalloy steel substrate under existing experimental conditions. From the measurement results, the average value of the longitudinal piezoelectric coefficient was 1.36 Pc/N, lower than the previously reported results of 1.5 pC/N–5.7 pC/N [ 46 ]. There may be influencing factors, such as different substrates, different thickness of ZnO films, the effect of the electrode material and buffer layer, different sputtering equipment, effects of testing equipment and testing methods [ 47 , 48 , 49 ].…”

Section: Resultscontrasting

confidence: 77%

Development and Characterization of ZnO Piezoelectric Thin Film Sensors on GH4169 Superalloy Steel Substrate by Magnetron Sputtering

Cui

Yin

et al. 2022

Micromachines

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At present, piezoelectric sensors are primarily applied in health monitoring areas. They may fall off owing to the adhesive’s durability, and even damage the monitored equipment. In this paper, a piezoelectric film sensor (PFS) based on a positive piezoelectric effect (PPE) is presented and a ZnO film is deposited on a GH4169 superalloy steel (GSS) substrate using magnetron sputtering. The microstructure and micrograph of ZnO piezoelectric thin films were analyzed by an X-ray diffractometer (XRD), energy dispersive spectrometer (EDS), scanning electron microscope (SEM), and atomic force microscope (AFM). The results showed that the surface morphology was dense and uniform and had a good c-axis-preferred orientation. According to the test results of five piezoelectric sensors, the average value of the longitudinal piezoelectric coefficient was 1.36 pC/N, and the average value of the static calibration sensitivity was 19.77 mV/N. We selected the sensor whose parameters are closest to the average value for the dynamic test experiment and we drew the output voltage response curve of the piezoelectric film sensor under different loads. The measurement error was 4.03% when repeating the experiment six times. The research achievements reveal the excellent performance of the piezoelectric film sensor directly deposited on a GH4169 superalloy steel substrate. This method can reduce measurement error caused by the adhesive and reduce the risk of falling off caused by the aging of the adhesive, which provides a basis for the research of smart bolts and guarantees a better application in structural health monitoring (SHM).

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“…1.5 ± 0.3 pm•V −1 for deposition on Pt at RT and 573 K, respectively. Despite no initial bias used to fully polarize the samples, these values are comparable with those reported in the literature for ZnO films obtained by RF sputter deposition[30][31][32][33][34][35].…”

supporting

confidence: 86%

“…However, for sputter-deposited ZnO films, the typical d 33 values reported in the literature are of few pm/V [ 30 , 31 ], lower than those obtained in films grown with other techniques. Values are particularly low when radio frequency (RF) is employed, due to generally smaller grains [ 32 , 33 , 34 , 35 ]. These small grains can reduce the effective displacement if their polarizations are not fully aligned, and the presence of impurities at grain boundaries can generate a large number of free electrons inside their structure, reducing the final resistivity.…”

Section: Introductionmentioning

confidence: 99%

ZnO Thin Films Growth Optimization for Piezoelectric Application

Polewczyk

Maffei

Vinai

et al. 2021

Sensors

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The piezoelectric response of ZnO thin films in heterostructure-based devices is strictly related to their structure and morphology. We optimize the fabrication of piezoelectric ZnO to reduce its surface roughness, improving the crystalline quality, taking into consideration the role of the metal electrode underneath. The role of thermal treatments, as well as sputtering gas composition, is investigated by means of atomic force microscopy and x-ray diffraction. The results show an optimal reduction in surface roughness and at the same time a good crystalline quality when 75% O2 is introduced in the sputtering gas and deposition is performed between room temperature and 573 K. Subsequent annealing at 773 K further improves the film quality. The introduction of Ti or Pt as bottom electrode maintains a good surface and crystalline quality. By means of piezoelectric force microscope, we prove a piezoelectric response of the film in accordance with the literature, in spite of the low ZnO thickness and the reduced grain size, with a unipolar orientation and homogenous displacement when deposited on Ti electrode.

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Development and characterization of confocal sputtered piezoelectric zinc oxide thin film

Cited by 19 publications

References 40 publications

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

Development and Characterization of ZnO Piezoelectric Thin Film Sensors on GH4169 Superalloy Steel Substrate by Magnetron Sputtering

ZnO Thin Films Growth Optimization for Piezoelectric Application

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