Development of a photonic integrated transceiver chip for WDM transmission

Matz, R.; Bauer, J.G.; Clemens, P.; Heise, G.; Mahlein, H. F.; Metzger, W.; Michel, H.; Schulte-Roth, G.

doi:10.1109/68.334828

Cited by 20 publications

(1 citation statement)

References 9 publications

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“…The control and switching of the near-field intensity of a plasmonic nanoantenna is particularly important for applications such as particle trapping and tweezing [35], design of vortex beams [36], non-linear optics [37], switchable lasing [38] and others. These plasmonic switches can be integrated into photonic integrated chips to be employed for telecommunication applications [39,40]. Further, these switches can also be integrated into plasmonic integrated circuits [30] and plasmonic logic circuits [41] which can be employed for optical computation and optical data storage [42].…”

Section: Introductionmentioning

confidence: 99%

Active near-field plasmonic switches based on Sierpiński-fractal nanoantennas on VO₂ films

Sharma¹,

Dhawan²

2022

J. Opt.

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We propose active near-field plasmonic switches based on a Sierpiński-fractal contour-bowtie plasmonic nanoantenna on top of a VO2 (Vanadium-Dioxide) thin film. The near-field intensity of the proposed fractal plasmonic nanoantenna can be switched by the application of heat, voltage, or optical energy to the underlying VO2 layer, which leads to a phase change of VO2 from the semiconductor state to the metallic state. This phase transition of the underlying VO2 film leads to an overall change in the optical properties of the nanoantenna system, hence driving the switch from an OFF state (with low near field intensity) to an ON state (with high near field intensity). The near field switching ability of the proposed switch is quantified by the intensity switching ratio, i.e., the ratio of intensity at the center of the plasmonic nanoantenna in its ON state to its OFF State(ION/IOFF). We employ Finite Difference Time Domain (FDTD) simulations to calculate the intensity switching ratio of the proposed near-field plasmonic switches. As the fractal order of the Sierpiński-fractal contour-bowtie nanoantenna is increased, the intensity in the ‘ON’ state of the switch is enhanced along with a reduction of intensity in the ‘OFF’ state of the switch. Thus, higher fractal orders of the Sierpiński-fractal contour-bowtie plasmonic nanoantenna lead to very high values of the intensity switching ratio for the proposed near-field switch. We demonstrate an intensity switching ratio of ~ 900 with a fractal order of 2 for the proposed switch which is the highest value of near-field intensity switching ratio reported thus far for a near-field plasmonic switch. Further, we also demonstrate that the intensity switching ratio and the spectral response of the proposed near-field switch can be controlled by changing its structural parameters such as length of the nanoantenna arm, the contour thickness, and the thickness of VO2 layer.

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