Development of compact radiation detectors based on MAPD photodiodes with Lutetium Fine Silicate and stilbene scintillators

Abstract

Results of gamma-ray measurements taken with Lutetium Fine Silicate (LFS) scintillators and Micro-Pixel Avalanche Photodiodes (MAPD) are presented in the energy range of 59.6 keV to 834.8 keV. Dependences of energy resolution on gamma-ray energy are studied. Results of several measurements are discussed to assess the performance of gamma ray source identification of the developed detector. The alpha particle and neutron detection performance of LFS and stilbene scintillators coupled to micro-pixel avalanche photodiode are discussed as well.

New gamma detector modules based on micropixel avalanche photodiode

“…Improvement of one parameter of MAPDs with surface pixel structure results in deterioration another parameter. As an example, it can be shown that increment pixel density up to 2000 pix/mm 2 reduces the PDE which strongly influences to the energy resolution of radiation detector [10, [12][13][14][15]. In the work [12] is shown that Hamamatsu devices called as MPPC-33-050C and MPPC-33-025C with Lutetium Fine Silicate (LFS) scintillator demonstrate non-linear response at the 320keV and 661 keV gamma ray energies, respectively.…”

Investigation of parameters of new MAPD-3NM silicon photomultipliers

“…Focusing on buried pixel photodiode structure, each pixel is located between epitaxial layers and it is connected to the substrate using the first layer. A potential barrier is formed between the pixel and the first epitaxial layer, which serves as a quenching resistor [3,[6][7][8]. They have been widely studied since 2006 [3].…”

“…specifically MAPD-3B, MAPD-3A, MAPD-3N, MAPD-3N1P, MAPD-3NK and MAPD-3NM-I devices. Parameters of MAPD with buried pixel structure were following: the pixel density range is 40000-10000 pixels/mm 2 , PDE is range of 10%-25%, operation voltage is range of 95 V-76 V and gain is range of 1 × 10 4 -1 × 10 5 [4,[6][7][8][9]. The parameters are enough to produce a gamma spectrometer based on MAPD-3NM-I [9].…”

Performance of silicon photomultipliers at low temperature

“…The recent technological improvements made the silicon photomultipliers (SiPM) attractive alternative sensors for many detector applications that would replace vacuum photomultiplier tubes (PMT). The features such as small size, low price, low power consumption and high gain, made it possible to use SiPMs in photon detection applications of many experiments in field of nuclear physics [1][2][3][4]. Recently, there are a number of experiments where low temperature stability of photo detectors is required [5][6][7].…”