Performance of silicon photomultipliers at low temperature

Nuruyev, S.; Ahmadov, G.; Sadigov, A.; Akberov, R.; Ahmadov, F.; Holík, M.; Kopatch, Yu. N.

doi:10.1088/1748-0221/15/03/c03003

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…Temperature was kept −9 • C during PDE measurement. The detailed information about the measurement method of PDE was discussed in [14]. MPPC-S13360-3025CS was used as a reference photodiode in measurements.…”

Section: Resultsmentioning

confidence: 99%

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Ahmadov

Akbarov

et al. 2022

J. Inst.

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In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

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Section: Resultsmentioning

confidence: 99%

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Ahmadov

Akbarov

et al. 2022

J. Inst.

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“…The gain and PDE of MAPD photodiodes were further improved by increasing the pixel diameter to 5 μm, and the pitch to 7 μm. Photodiodes made in this structure are called MAPD-3N [33]. The gain of MAPD-3N photodiodes was ∼ 6•10 4 , PDE was ∼ 22% and the pixel density was 15000 pixels/mm 2 .…”

Section: Introductionmentioning

confidence: 99%

“…The gain was 6 • 10 4 , and the PDE was about 26%. However, MAPD-3NK structure exhibited several drawbacks: the operating voltage exceeded 90 V, the temperature constant of the breakdown voltage exceeded 60 mV/ • C, and high dark currents [33]. The drawbacks limited the use of the MAPD-3NK photodiode in many experiments.…”

Section: Introductionmentioning

confidence: 99%

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Improvement of parameters of micro-pixel avalanche photodiodes

Sadigov¹,

Ahmadov²,

Sadygov³

et al. 2022

J. Inst.

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The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.

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“…Conventional scintillation detectors based on vacuum photomultiplier tubes (PMT) do not meet these specific operational conditions. Therefore, scintillation detectors based on new photosensors are quite promising candidates that meet the requirements much better, and focusing on their further development is in high demand [9][10][11][12][13][14][15][16][17][18][19][20][21][22] . Many research teams focus on the development of scintillation detectors based on micro pixel avalanche photodiodes (MAPD) or silicon avalanche photomultipliers (SiPM) [15][16][17][18][19][20][21][22][23][24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

Gamma ray detection performance of newly developed MAPD-3NM-II photosensor with LaBr3(Ce) crystal

Holík

Ahmadov

Sadigov

et al. 2022

Preprint

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This paper is devoted to gamma-ray detection performance of the newly developed MAPD-3NM-II type SiPM sensor array (4x4) with LaBr3(Ce) scintillator. The gamma-ray spectra of various sources have been measured in the energy range from 26 keV up to 1332 keV. The newly developed array based on MAPD-3NM-II sensors proved ∼22 % enhancement in energy resolution in comparison to the former MAPD-3NM-I based array. The energy resolution of 662 keV gamma-rays measured by MAPD-3NM-II was 3.3 % while clearly surpassing 4.25 % resolution of MAPD-3NM-I predecessor. The enhancement is related to the high PDE of the new MAPD-3NM-II. Obtained results show that the new MAPD-3NM-II demonstrated good energy resolution and linearity in the studied energy region. The energy resolution of the new detector developed based on MAPD-3NM-II was better than all previous products of MAPD.

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Performance of silicon photomultipliers at low temperature

Cited by 12 publications

References 7 publications

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Improvement of parameters of micro-pixel avalanche photodiodes

Gamma ray detection performance of newly developed MAPD-3NM-II photosensor with LaBr3(Ce) crystal

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