Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Abstract

This is a repository copy of Development of GaN transducer and on-chip concentrator for galvanic current sensing.

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

“…Note that the fabricated GaN MagHEMT operate as the normally-on (depletion mode) HEMT with the cut-off voltage of Voff = -2.4V. The technology and design of experimental MagHEMTs used in this work for model development and parameters extraction can be found in details in [16].…”

Coil Design for Integration with GaN Hall-Effect Sensors

“…Recent research developments in magnetic field sensing and spatial integration at PCB [8] and chip levels [9] have enabled the anticipated isolation provided by the Hall effect sensor from the power source to outperform the shunt measurement techniques. Nevertheless, the study of spatial dependence of a magnetic sensor exposed area with or without a material field concentrator for various shapes and geometries of the coil is a difficult, tedious, and slow task.…”

“…Furthermore, the innovative magneto-static FEA's methodology and results provide powerful insights into the spatial distribution of the magnetic field intensity at sensor active region prior to fabrication stage. In the present system, the current is galvanically monitored with a GaN Hall-effect sensor [9,13,14] that will be monolithically integrated with a normally-off GaN power switch. The initial step toward demonstrating a smart power integrated circuit is the coil design.…”

Development of Vertical GaN FETs for Bi-directional Battery Charging

“…Gallium Nitride (GaN) lateral devices [1][2][3][4][5][6][7][8][9][10] have been proliferating the power electronics industry. For power conversion applications, GaN vertical devices with reduced chip area are preferred over lateral GaN HEMT devices since blocking voltage can be scaled independently of the chip area and high value threshold voltages can be achieved.…”