Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

“…One type of the devices have their drain current flowing along the [1][2][3][4][5][6][7][8][9][10] are the transfer characteristics of these devices. The threshold voltage of both types of devices is 0.5 V. The devices with drain current along the [1][2][3][4][5][6][7][8][9][10] direction have a maximum drain current density of 28.5 mA/mm and a peak transconductance (Gm peak ) of 28 mS/mm at V GS ¼ À1 V and V DS ¼ À3 V. The devices with drain current along the [110] direction have a maximum drain current density of 25 mA/mm and a Gm peak of 25 mS/mm at V GS ¼ À1 V and V DS ¼ À3 V. The differences in these electrical properties between the two types of devices are less 15%, unlike the case of InAs QW n-channel FETs. This implies that InGaSb QW FETs are less susceptible to twins [14].…”

“…Table 1 summarizes the carrier transport properties of the InGaSb/AlSb QW structures determined by Hall effect measurements at room temperature and 77 K. As the growth temperature is reduced from 380 1C to 360 1C, the hole mobility at room temperature increases from 630 cm 2 /V s to 770 cm 2 /V s. The higher hole mobility at 77 K of the InGasSb/AlSb QW grown at 360 1C against 380 1C, i.e. 3060 cm 2 /V s versus 2490 cm 2 /V s, implies that it contains less defects, probably because of the reduced lattice relaxation and defects generation with decrease of the growth temperature [6,11]. Notably, a repeated experiment on the growth of 360 1C gives hole mobility of 838 cm 2 /V s with a sheet carrier concentration of 9.5 Â 10 11 cm À 2 at room temperature.…”

“…This makes the integration with InAs n-channel FETs for complementary circuits much easier since they can share the same buffer layer on Si. Up to date, high hole mobility InGaSb/Al(Ga)Sb p-channel devices have been demonstrated on GaAs substrates, but the reports of III-V pchannel devices on Si substrates remain few [5][6][7]. In 2012, Takei et al demonstrated the integration of InGaSb/AlSb p-channel FETs on Si substrates using epitaxial layer transfer technology [8].…”

“…The group V materials, Sb and As were supplied by two valved crackers, respectively. Vicinal (100) Si p-type substrates with 6 degrees tilted toward the [1][2][3][4][5][6][7][8][9][10] direction were used to reduce the formation of anti-phase domain [10]. Before the commencement of epitaxial growth, the substrate was heated at 720 1C for 1 h to remove the hydrogen atoms and residual contaminants on the surface.…”

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

“…Room-temperature hole mobilities as high as 1000 cm 2 /V s to 1500 cm 2 /V s have been reported for InSb, 16 GaSb, 17,18 and InGaSb. 19,20 These antimonide quantum wells have been used in Schottkybarrier p-FETs with good direct-current (DC) and microwave performance. 16,[21][22][23][24][25] In addition, (In) GaSb-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated and have the attractive advantage of much lower gate leakage current, which is necessary for lowpower logic circuits.…”