High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Chiu, Pei C.; Huang, Heh‐Lung; Hsueh, Wei Jen; Hsin, Yu Ming; Chen, Cheng-Yu; Chyi, Jen Inn

doi:10.1016/j.jcrysgro.2015.03.052

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…Moreover, the growth temperature and V/III ratio are crucial to growing the double V elements of GaAsSb buffer layer. Although GaAsSb buffer layer has been reported in some literature, [10,11] the information is still insufficient about the influence of the growth temperature on the electron mobility of the step-graded GaAs x Sb 1−x metamorphic buffer layer for such heterostructures grown on the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

Zhang

et al. 2019

Chinese Phys. B

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The InAs/AlSb heterostructures with step-graded GaAs x Sb1 − x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAs x Sb1 − x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAs x Sb1 − x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), reciprocal space map (RSM), and Hall measurements, the crystal quality and composition of GaAs x Sb1 − x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAs x Sb1 − x metamorphic buffer layer grown at a temperature of 410 °C.

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Section: Introductionmentioning

confidence: 99%

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

Zhang

et al. 2019

Chinese Phys. B

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“…Figure 3(e) benchmarks l h as a function of indium composition (x) in published In x Ga 1-x Sb QW structures. [30][31][32] For fair comparison of mobility, we added guideline of l h ¼ qs/m eff with different mean free times (s). Here, the m eff is the effective light hole mass of strained In x Ga 1-x Sb on the Al 0.95 Ga 0.05 Sb buffer layer, which is estimated by the kÁp method.…”

mentioning

confidence: 99%

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Roh

Kim

Geum

et al. 2018

Applied Physics Letters

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We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system. The results show a compressive strain value of 1.1% in In0.25Ga0.75Sb QW channel, which is very close to the theoretical value of 1.1% from lattice mismatch, exhibiting the highest hole mobility of 1170 cm2/V s among reported mobility in In0.25Ga0.75Sb QW. Furthermore, it was able to be fabricated as p-type Fin-FET and shown the excellent electrical characteristics with low Smin and high gm.

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Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy

Huang

Yuan

Chen

et al. 2019

Journal of Crystal Growth

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High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Cited by 4 publications

References 14 publications

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy

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High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Cited by 4 publications

References 14 publications

Effect of growth temperature of GaAsx Sb1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

Effect of growth temperature of GaAsx Sb1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy

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Product

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Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*