Diameter‐Controlled Growth of Single‐Crystalline In<sub>2</sub>O<sub>3</sub> Nanowires and Their Electronic Properties

Li, Chao; Zhang, Daihua; Han, Song; Tang, Tao; Zhou, Chongwu

doi:10.1002/adma.200390029

Cited by 366 publications

(242 citation statements)

References 26 publications

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“…Next, a suspension of In 2 O 3 or ZnO nanowires in VLSI-grade 2-propanol solution was disbursed on the gate patterned substrates. Single-crystal semiconducting In 2 O 3 nanowires were synthesized by a pulsed laser ablation process 26 , with average diameter and length of 20 nm and 5 mm, respectively. Powdered ZnO nanowires synthesized by thermal evaporation and condensation were purchased from Nanolab.…”

Section: Methods Fabrication Of In 2 O 3 and Zno Nwt Devicesmentioning

confidence: 99%

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

et al. 2007

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Section: Methods Fabrication Of In 2 O 3 and Zno Nwt Devicesmentioning

confidence: 99%

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

et al. 2007

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“…As a result, the devices behave as wide band gap semiconductors whose performance is influenced by the surrounding environment. 8 On the other hand, intentional doping can greatly modify the device properties and yield new device applications. One such example is tin-doped indium oxide (ITO), in which metal-like behavior is achieved when In 2 O 3 is degenerately doped by Sn.…”

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confidence: 99%

High-Performance Transparent Conducting Oxide Nanowires

et al. 2006

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We report the growth and characterization of single-crystalline Sn-doped In 2 O 3 (ITO) and Mo-doped In 2 O 3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of ∼85% in the visible range, resistivities as low as 6.29 × 10 -5 Ω·cm and failure-current densities as high as 3.1 × 10 7 A/cm 2 . Such nanowires will be suitable in a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growth of branched nanowire structures in which semiconducting In 2 O 3 nanowire arrays with variable densities were grown epitaxially on metallic ITO nanowire backbones.One-dimensional (1D) nanostructures such as nanowires, nanorods, and nanobelts have become the focus of intensive investigation in the past decade as potential building blocks for nanoscale devices and sensors. 1-5 Along with group IV and III-V materials, metal oxide (including In 2 O 3 , SnO 2 and ZnO) nanowires have been widely studied due to their excellent electrical and optical properties and ease of fabrication. [6][7][8] In these studies the metal oxide nanowires are typically not intentionally doped, and the carriers are normally generated by structural defects such as oxygen deficiencies. As a result, the devices behave as wide band gap semiconductors whose performance is influenced by the surrounding environment. 8 On the other hand, intentional doping can greatly modify the device properties and yield new device applications. One such example is tin-doped indium oxide (ITO), in which metal-like behavior is achieved when In 2 O 3 is degenerately doped by Sn. Due to its high conductivity and high transmittance in the visible spectral region, 9 ITO has become by far the most important transparent conducting oxide material, and ITO films have found applications in various optoelectronic devices such as flatpanel displays, solar cells, and light-emitting diodes. [10][11][12] The ability to obtain highly transparent and highly conducting ITO nanowires may potentially further enhance the performance of such devices due to the increased effective device area using nanowire electrodes. Furthermore, similar to NiSi and TaSi 2 nanowires, 13,14 the highly conducting ITO nanowires may also be used as interconnects in integrated nanocsale devices.The growth of ITO nanowires/nanorods has been reported by several groups since the first study on In 2 O 3 nanobelts in 2001. [15][16][17][18][19][20][21] However, detailed electrical characterizations have not been reported, and it is not clear whether these ITO nanowire/nanorods have the desired electrical properties. For example, the only reported resistivity value is ∼0.4 Ω‚cm, 18 which is several orders higher than that can be obtained in commercially available ITO films 9 and clearly too high ...

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“…4 More recently, research has been conducted on indium oxide nanostructures, predominantly nanowires, for potential applications in highsensitivity sensor, optoelectronic, field-emission, electronic, and memory devices. [5][6][7] Various synthesis approaches have been demonstrated, which include vapor transport 8 and laser ablation 9 on a variety of substrates. However, common to other nanowire syntheses, growth directionality control (with respect to the substrate) and direct integration (on the same substrate) into functional devices remain as two significant challenges.…”

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Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

et al. 2004

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We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical field-effect transistor (VFET). We first synthesize single crystalline semiconductor indium oxide (In 2 O 3 ) nanowires projecting vertically and uniformly on a nonconducting optical sapphire substrate. Direct electrical contact to the nanowires is uniquely provided by a self-assembled underlying In 2 O 3 buffer layer formed in-situ during the nanowire growth. A controlled time-resolved growth study reveals dynamic simultaneous nucleation and epitaxial growth events, driven by two competitive growth mechanisms. Based on the nanowire-integrated platform, a depletion mode n-channel VFET with an In 2 O 3 nanowire constituting the active channel is fabricated. Our unique vertical device architecture could potentially lead to tera-level ultrahigh-density nanoscale electronic, and optoelectronic devices.Bottom-up nanofabrication approaches involving direct interfacing and integration of low-dimensional nanostructures, in particular vertically aligned one-dimensional (1D) nanowires, could potentially provide an attractive solution to attain ultrahigh-density advanced nanoscale devices and 3D nanocircuitries. 1 To realize and maximize the true potential of these nanostructures for advanced applications in nanoelectronics and optoelectronics, reproducible synthesis of 1D nanowires with controlled directionality and morphology is critical. Equally important, a means of providing ideal and direct electrical interface to the nanowires 2 without disrupting their structural integrity would facilitate subsequent nanoscale device integration and realization of good device performance.Indium oxide is a direct wide band gap semiconductor (E g ∼ 3.55-3.75 eV) transparent oxide. 3 It finds several applications ranging from transparent conductive electrodes to electrochromic mirrors and gas sensors. 4 More recently, research has been conducted on indium oxide nanostructures, predominantly nanowires, for potential applications in highsensitivity sensor, optoelectronic, field-emission, electronic, and memory devices. [5][6][7] Various synthesis approaches have been demonstrated, which include vapor transport 8 and laser ablation 9 on a variety of substrates. However, common to other nanowire syntheses, growth directionality control (with respect to the substrate) and direct integration (on the same substrate) into functional devices remain as two significant challenges. To avoid the usual pick-and-place methods of manipulating and aligning horizontally lying nanowires to fabricate prototype testing platforms, 10,11 a proposed solution is to grow single crystalline nanowires epitaxially on a latticematched substrate with the major nanowire growth direction orthogonal to the substrate plane and to use this integrated platform for direct device fabrication. Ideally, the substrate also should be electrically conductive; however, potential substrates that meet both requirements are not readily available. Afte...

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Diameter‐Controlled Growth of Single‐Crystalline In₂O₃ Nanowires and Their Electronic Properties

Abstract: We thank the U.S. Air Force Office of Scientific Research for support through F49620-00-1-0103 and a MURI from the U.S. Army Research Office through DAAD19-99-1-0316.

Cited by 366 publications

References 26 publications

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

High-Performance Transparent Conducting Oxide Nanowires

Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

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Diameter‐Controlled Growth of Single‐Crystalline In2O3 Nanowires and Their Electronic Properties

Abstract: We thank the U.S. Air Force Office of Scientific Research for support through F49620-00-1-0103 and a MURI from the U.S. Army Research Office through DAAD19-99-1-0316.

Cited by 366 publications

References 26 publications

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

High-Performance Transparent Conducting Oxide Nanowires

Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

Contact Info

Product

Resources

About

Diameter‐Controlled Growth of Single‐Crystalline In₂O₃ Nanowires and Their Electronic Properties