Diamond nucleation under bias conditions

Stöckel, R.; Stammler, M.; Janischowsky, K.; Ley, L.; Albrecht, M.; Strunk, H. P.

doi:10.1063/1.366667

Cited by 63 publications

(21 citation statements)

References 27 publications

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“…Critical nuclei are considered to appear either at defect sites on a surface or at a short distance below the surface, aided by ion bombardment brought about by the bias process. Staeckel et al [56] have made a detailed TEM study of the bias enhanced nucleation of diamond on Si(100) substrates. They observed a 10 nm thick b-SiC layer which appears to play the crucial role in the orientation of the diamond nuclei.…”

Section: Nucleation Of Diamondmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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Section: Nucleation Of Diamondmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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“…Another approach would be the bias enhanced nucleation (BEN) process, as reported by Yogo and others [27]- [30]. The BEN process, which is performed in situ, involves application of a negative dc substrate bias to increases the nucleation density from to cm , providing a highly oriented heteroepitaxial diamond film on substrates [28], [29]. Intrinsic PDFs were grown with the BEN, followed by the standard growth process with no bias.…”

Section: Bias Enhanced Nucleation (Ben) For the Intrinsic(undoped)mentioning

confidence: 99%

PECVD Diamond-Based High Performance Power Diodes

Gürbüz

Kang²,

Davidson³

et al. 2005

IEEE Trans. Power Electron.

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In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm 2 of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Shottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts. Laboratory. He conducts applied research in advanced electronic materials and microelectronic microsensors and is developing programs in synthetic diamond and other rugged advanced wide band gap semiconductors for electronic, biological, and mechanical applications. He made first determinations of elastic modulus, tensile strength, chemical sensing properties, tip electron emission of diamond films, and developed first technology for patterning diamond films. He designed, fabricated, developed, and characterized first diamond MEMS sensors, diamond-based chemical sensors, resistors, capacitors, and highly efficient diamond microemitter vacuum microelectronic devices. He has over 100 publications and six patents in this area.

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“…This model agrees well with experimental reports. 66,140 The formation of a thin graphite layer by subplantation was also suggested. 141 During BEN, the ion bombardment could induce substrate atom displacement and, in this way, should favor the formation of a compound sublayer.…”

Section: Subplantation Mechanismmentioning

confidence: 99%

Highly Oriented Diamond Films on Heterosubstrates: Current State of the Art and Remaining Challenges

Arnault

2003

Surf. Rev. Lett.

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The potential applications of diamond in the field of electronics working under high power and high temperature (aeronautic, aerospace, etc.) require highly oriented films on heterosubstrates. This is the key motivation of the huge research efforts that have been carried out during the last ten years. Very significant progress has been accomplished and nowadays diamond films with misorientations close to 1.5 • are elaborated on β-SiC monocrystals. Moreover, an excellent crystalline quality with polar and azimuthal misalignments lower than 0.6 • is reported for diamond films grown on iridium buffer layers. Unfortunately, these films are still too defective for high power electronics applications. To achieve higher crystalline quality, further improvements of the deposition methods are needed. Nevertheless, a deeper knowledge of the elemental mechanisms occurring during the early stages of growth is also essential. The first part of this paper focuses on the state of the art of the different investigated ways towards heteroepitaxy. Secondly, the present knowledge of the early stages of diamond nucleation and growth on silicon substrates for both classical nucleation and bias-assisted nucleation (BEN) is reviewed. Finally, the remaining questions concerning the understanding of the nucleation processes are discussed.

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Diamond nucleation under bias conditions

Cited by 63 publications

References 27 publications

High—temperature Sensors Based on SiC and Diamond Technology

High—temperature Sensors Based on SiC and Diamond Technology

PECVD Diamond-Based High Performance Power Diodes

Highly Oriented Diamond Films on Heterosubstrates: Current State of the Art and Remaining Challenges

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