Dielectric breakdown in Co–Fe–B/MgO/Co–Fe–B magnetic tunnel junction

Khan, Ashfaq Ahmad; Schmalhorst, Jan-Michael; Thomas, Andy; Schebaum, Oliver; Reiss, Günter

doi:10.1063/1.2939571

Cited by 38 publications

(26 citation statements)

References 15 publications

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“…The bias-voltage range of the spectra is also only limited by the breakdown voltage of the junctions ͑typically in the range of a few volts͒. 10 It is much simpler than laterally resolved methods in terms of sample preparation. Furthermore, it is also closer to applications as it provides information about MTJs that could be used as the base for reconfigurable magnetic logic, 11 magnetic sensors, or magnetic random-access memory.…”

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confidence: 99%

Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs

et al. 2009

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MgO-based magnetic tunnel junctions with up to 230% tunnel magnetoresistance ratio at room temperature and up to 345% at 13 K are prepared. The lower electrode is either exchange-biased or free, while the top electrode is free or an exchanged-biased artificial ferrimagnet, respectively. Additionally, a pseudo-spin-valve ͑hard-soft switching͒ design with two unpinned electrodes is used. Inelastic electron-tunneling spectra for each of these systems show a strong variation in the zero-bias anomaly with a reduced peak for some of the junctions. At voltages around 200 mV additional structures are found, which are not known from junctions with lower magneto resistance, such as alumina-based junctions. We discuss the spectra for the different electrode types and compare our findings with respect to barrier material and magnetoresistance ratio.

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confidence: 99%

Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs

et al. 2009

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“…This not only increases the power consumed but also degrades the lifetime of the MTJ [8]. Furthermore, infrequent switching of the input consumes static power even when the MTJs are not written with new values (Fig.…”

Section: B Power Gating Schemementioning

confidence: 99%

MTJ-Based State Retentive Flip-Flop With Enhanced-Scan Capability to Sustain Sudden Power Failure

Iyengar

Ghosh

Jang

2015

IEEE Trans. Circuits Syst. I

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We present two non-volatile flip-flops (NVFFs) that incorporate magnetic tunnel junctions (MTJ) to ensure fast data storage and restoration from intentional and unintentional power outages. The proposed designs also facilitate enhanced scan mode testing capability by exploiting the nonvolatile latch to function as hold latch for delay testing. The proposed NVFF eliminates additional write drivers, and can operate at up to 2 GHz at 1.1 V, with 0.55 pJ of energy consumption in 22 nm predictive technology. We also address the issue of write asymmetry of MTJ through careful transistor upsizing to achieve near uniform write latency. A data-dependent power gating technique is proposed to mitigate the high static current during retention and back-to-back writing of the identical input data. The proposed gated NVFF achieves several orders of magnitude energy saving at the expense of 1.56X area compared to a standard enhanced scan flip-flop. Index Terms-Enhanced scan (ES), magnetic tunnel junction (MTJ), nonvolatile flip-flop (NVFF), power gating.

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“…Using an example set of microscopic and macroscopic parameters, our combined quantum transport and stochastic magnetization dynamics simulation gives TMR, RA, and switching asymmetry results comparable to our device measurements and many published experimental works. [17][18][19][20] Figure 5 shows an example of the measured bias voltage dependence of spin torque switching in MgO based MTJs in a recent experiment by another group. 20 As in our measurement, the magnetic field in their experiment has been balanced.…”

Section: Spin Torque Switching Asymmetry In Magnetic Tunneling Jmentioning

confidence: 99%

Quantum transport and stochastic magnetization dynamics simulation on intrinsic spin torque switching asymmetry

2009

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We report on the intrinsic spin torque-induced magnetization switching asymmetry due to the asymmetry in the quantum ballistic spin transport through a magnetic tunneling junction. Magnetization switching behaviors between high and low resistance states are explored using a combined microscopic quantum ballistic spin transport and macroscopic stochastic magnetization dynamics simulation. This model predicts both a higher switching voltage and a steeper slope of voltage versus pulse duration when switching from the parallel state to the antiparallel state, a result consistent with experimental observations.

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Dielectric breakdown in Co–Fe–B/MgO/Co–Fe–B magnetic tunnel junction

Cited by 38 publications

References 15 publications

Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs

Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs

MTJ-Based State Retentive Flip-Flop With Enhanced-Scan Capability to Sustain Sudden Power Failure

Quantum transport and stochastic magnetization dynamics simulation on intrinsic spin torque switching asymmetry

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