Dielectric losses of SrTiO3 thin film capacitors with Pt bottom electrodes at frequencies up to 1GHz

Finstrom, Nicholas H.; Gannon, J. A.; Pervez, Nadia K.; York, R.A.; Stemmer, Susanne

doi:10.1063/1.2405381

Cited by 12 publications

(7 citation statements)

References 17 publications

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“…This was due to real physical differences between the thin and thicker films. In particular, the dielectric loss tangents (tan ), which are sensitive to the bulk film properties, 21) were higher for the 20 and 40 nm films (Fig. 3).…”

mentioning

confidence: 96%

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃

Boesch

Son

LeBeau

et al. 2008

Appl. Phys. Express

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Epitaxial, (001)-oriented SrTiO3 thin films were grown by sputtering on (001)Pt/SrTiO3 substrates to thicknesses ranging from 20 to 160 nm. Their dielectric properties were studied using parallel-plate capacitor structures. For film thicknesses greater than 40 nm, the thickness dependence of the capacitance density could be described with a model of low-permittivity interfacial layers that are connected in series with the bulk of the film. Thinner films showed a deviation from the linear relationship between the inverse capacitance density and thickness. They also showed an increase in loss and a small, power-law frequency dependence of the capacitance. These changes were indicative of different bulk dielectric properties of the thinnest SrTiO3 films.

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mentioning

confidence: 96%

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃

Boesch

Son

LeBeau

et al. 2008

Appl. Phys. Express

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“…As one of the most studied perovskite material systems, SrTiO 3 (STO) thin films have been widely used in these applications due to its high dielectric constant (~120), low dielectric loss, and low curie temperature (~250 • C) [6][7][8][9][10][11]. Compared with STO films, the Ba 1−x Sr x TiO 3 (BST) thin films have a higher dielectric constant, which has currently become very attractive for higher integration of thin film capacitors.…”

Section: Introductionmentioning

confidence: 99%

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Chen

Huang

et al. 2020

Crystals

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Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

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“…For these applications, one of key issues is to understand their loss mechanisms and to adjust effectively the dielectric loss in order to meet the requirements of real devices. It is known that there are two different classes of contributions to dielectric loss: (i) intrinsic loss due to the interaction of the ac field with the phonons of the material and (ii) extrinsic loss owing to the coupling of the microwave field with defects [5][6][7][8][9]. According to the theory of quantum mechanics, the intrinsic loss mainly corresponds to the absorption of the energetic quantum of the electromagnetic field ħω (ω is the ac field frequency) in collisions with the thermal phonons.…”

Section: Introductionmentioning

confidence: 99%

Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films

Zhu

Guigues

Defaÿ

et al. 2008

Journal of Applied Physics

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It was experimentally found that the evolution of dielectric loss with processing temperature displays a common trend in ferroelectric and dielectric thin oxide films: firstly an increase and then a decrease in dielectric loss when the processing temperature is gradually raised. Such a dielectric response of ferroelectric/dielectric thin films has been theoretically addressed in this work. We propose that at the initial stage of the crystallization process in thin films, the transformation from amorphous to crystalline phase should increase substantially the dielectric loss; then, with further increase in the processing temperature, the coalescent growth of small crystalline grains into big ones could be helpful in reducing the dielectric loss by lowering grain boundary densities. The obtained experimental data for (Ba,Sr)TiO 3 thin films with 500 nm in thickness were analyzed in terms of the model developed and shown to be in a reasonable agreement with the theoretical results. a)

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Dielectric losses of SrTiO3 thin film capacitors with Pt bottom electrodes at frequencies up to 1GHz

Cited by 12 publications

References 17 publications

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films

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Dielectric losses of SrTiO3 thin film capacitors with Pt bottom electrodes at frequencies up to 1GHz

Cited by 12 publications

References 17 publications

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO3Films on (001)Pt/SrTiO3

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO3Films on (001)Pt/SrTiO3

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films

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Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO₃Films on (001)Pt/SrTiO₃