Digitally alloyed ZnO and TiO2 thin film thermistors by atomic layer deposition for uncooled microbolometer applications

Tilkioglu, Bilge; Bolat, Sami; Tanrikulu, M. Yusuf; Okyay, Ali Kemal

doi:10.1116/1.4976513

Cited by 2 publications

(1 citation statement)

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“…High TCRs (typically between −2 and −5%/K) are achievable using semiconducting materials such as vanadium oxide [13,14,15,16,17,18,19,20,21,22], amorphous silicon [22,23,24,25,26], and other materials [26,27,28,29,30]. The high TCRs are accompanied with resistivity values (typically between 0.07 and 8000 Ω·cm) suitable for resistive thermometer layers in microbolometer configurations.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Resistive Properties of Vanadium Pentoxide/Vanadium Multi-Layer Thin Films for Microbolometer & Antenna-Coupled Microbolometer Applications

Abdel‐Rahman

Zia

Alduraibi

2019

Sensors

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In this study, vanadium oxide (VxOy) semiconducting resistive thermometer thin films were developed, and their temperature-dependent resistive behavior was examined. Multilayers of 5-nm-thick vanadium pentoxide (V2O5) and 5-nm-thick vanadium (V) films were alternately sputter-deposited, at room temperature, to form 105-nm-thick VxOy films, which were post-deposition annealed at 300 °C in O2 and N2 atmospheres for 30 and 40 min. The synthesized VxOy thin films were then patterned into resistive thermometer structures, and their resistance versus temperature (R-T) characteristics were measured. Samples annealed in O2 achieved temperature coefficients of resistance (TCRs) of −3.0036 and −2.4964%/K at resistivity values of 0.01477 and 0.00819 Ω·cm, respectively. Samples annealed in N2 achieved TCRs of −3.18 and −1.1181%/K at resistivity values of 0.04718 and 0.002527 Ω·cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.

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