Dirac Calculations for Proton Inelastic Scattering at Intermediate Energies

El-Nohy, N. A.; El-Hammamy, M. N.; Aly, Nihal; Abdel-Moneim, A. M.; Adam, Hamza

doi:10.1007/s13538-016-0444-1

Cited by 2 publications

(1 citation statement)

References 24 publications

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“…In the inelastic scattering process, electrons gain electron gain after the excitation of secondary electrons while the process of excitation of electrons in the process of multiple collisions gradually loses energy, and the single energy loss is much smaller than the initial energy of the incident electrons, so the single energy loss can be calculated using the Bethe energy loss formula. Each inelastic scattering collision is considered an independent event [37,38], and its energy loss formula is expressed as follows:…”

Section: Inelastic Scattering Model Of Incident Electrons In Thementioning

confidence: 99%

Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Qin

Shi

Shi³

et al. 2022

Advances in Multimedia

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We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of EBCMOS devices. Exponential doping of the electron multiplication layer can form a built-in electric field in the electron multiplication layer that is favorable for photoelectron transport, so exponential doping instead of uniform doping in the electron multiplication layer of EBCMOS can effectively improve the charge collection efficiency. It is shown that exponential heavy doping on the side of the electron multiplication layer near the dead layer and exponential light doping on the side near the depletion region can improve the built-in electric field structure and increase the lifetime of the multiplied electrons, thereby improving the charge collection efficiency of EBCMOS. The optimized device achieves a charge collection efficiency of 94.48% at an incident electron energy of 4 keV, an electron beam diameter of 20 nm, a dead layer thickness of 60 nm, and a P-type silicon epitaxial layer thickness of 10 μm.

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Section: Inelastic Scattering Model Of Incident Electrons In Thementioning

confidence: 99%