Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Sun, Yabin; Fu, Jun; Wang, Yudong; Zhou, Wei; Zhang, Wei; Liu, Zhihong

doi:10.1016/j.spmi.2016.03.046

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…Lastly, C1, C2, and C3 were tuned for DC blocking (or AC coupling) and RBIAS supplied the desired current to the base terminal of Q4. For a theoretical analysis, a small-signal model of a SiGe HBT was constructed as shown in Figure 2 [24,25]. Whereas the complete small-signal-equivalent models were much more complex [26], only a few device parameters that were dominant in determining circuit performance were selected for simplicity.…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

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Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

“…Once the device parameters of the SiGe HBT in the LNA were extracted, the modeling was conducted for the pre-and post-irradiation conditions [25,27]. For parameters that changed after irradiation, their values were modeled based on the information in the literature [3,4].…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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“…Compared with the π-shaped equivalent circuit (Zhang and Gao, 2018; Álvarez-Botero et al , 2015; Johansen et al , 2016), the T -shaped equivalent circuit is more closely related to the original derivation of HBTs. Therefore, the T -shaped model is widely adopted for characterizing small-signal behavior of HBTs in some literatures (Sun et al , 2016; Oudir et al , 2010; Oudir et al , 2008). There have been many previous attempts made to extract parameters in a small-signal equivalent circuit using direct and optimized extraction techniques.…”

Section: Introductionmentioning

confidence: 99%

An analytic method for parameter extraction of InP HBTs small-signal model

Zhang

Liu

Wang

et al. 2021

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Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

Su,

Mao,

Wang

et al. 2024

Micro & Optical Tech Letters

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The extraction of small‐signal parameters is of great importance for the modeling of InP heterojunction bipolar transistors (HBTs). This letter proposes an improved small‐signal parameter extraction method that considers both the emitter–collector capacitance effect and the current crowding effect. The corresponding parameter extraction procedure based on closed‐form equations is outlined. Furthermore, the model parameter extraction method is validated using two different‐sized InP HBT devices with multibias S‐parameters. The results demonstrate that the established small‐signal model exhibits greater than 90% accuracy across the frequency range of 1–110 GHz. In particular, in the high‐frequency band (above 50 GHz), the proposed model exhibits an improvement in accuracy of 7.4% after considering the emitter–collector capacitance and current crowding effects. This method can contribute to accurate modeling of the noise and large‐signal performance of InP HBT.

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Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Cited by 6 publications

References 13 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

An analytic method for parameter extraction of InP HBTs small-signal model

A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

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