Direct Electrical Characterization of Metal Induced Lateral Crystallization Regions by Spreading Resistance Probe Measurements

Abstract

Material characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm2/Vs to 34 cm2/Vs.

Impurities and Grain Size Modeling in Recrystallized Silicon

“…We may reliably use these calculated data for comparison with experimental data of SRP measurements [14]. However, the results of SPR measurements depend upon the size of probe diameter and other correction factors, which have been specified in [2] and which interfere with the use of absolute values.…”

“…In Table 1, partially taken from [2], the spreading resistance ratios of experimental values are shown in the fourth column. Based on these values, grain sizes of polycrystalline silicon at equal resistivity ratios have been defined by calculated curve from Figure 3 and included in the fifth column of Table 1.…”

“…At the moment, MILC films consist of separated recrystallized regions, which can be studied by SRP measurements [2]. As known, the given method is used to provide data about spreading resistance in the layers and to receive, with great accuracy, the distribution of resistance in ultra-shallow junction (USJ) layers [13].…”

“…Using experimental data of SRP measurements received and described in [2], it is shown that carrier mobility in the boron ion implanted layer formed in the MILC region is up 65 % in comparison with mobility in the boron ion implanted layer formed in single crystalline silicon. It is also shown that, under different conditions, mobility can change from 24 cm 2 /Vs to 34 cm 2 /Vs, depending upon the time of recrystallization and the distance from the seeds.…”

“…DIOS is used for the calculation of properties of single crystalline and polycrystalline silicon layers ion implanted with subsequent annealing and for defining the resistivity of layers. In this paper, DIOS is used for the simulation of silicon film properties in the same conditions as prepared and measured in [2].…”