DLTS study of GaAs MIS structures with plasma deposited insulator

Abstract

The results of a DLTS study of GaAs MIS structures with plasma deposited Si3N4 as insulator are given. It is established that the activation energy and the capture cross section of traps decrease with reverse bias and at large biases correspond to the respective parameters of bulk traps. A correlation is found between the DLTS spectra and the maximum HF capacitance of the MIS structure in the "accumulation" region. Experimental data are explained in the framework of a "unified defect model" by the change of the potential relief in a semiconductor as a result of a high-resistivity layer formed near the interface. The interpretation of the DLTS spectra of the GaAs MIS structures is discussed. MeTofloM HCrY H3YqaJIEICb GaAS MnH-CTPYKTYPbl C IIJIa3MeHbIM Si3N4 B Ka9eCTBe pi3JIeKTpIIKa. YCTaHOBJleHO, 9TO 3HeprKII aKTHBaqIlH H CeYeHHe 3aXBaTa JIOByIIIeK YMeHbIIIaIoTCX C YBeJIIIYeHHeM 06paTHOrO HaIIpXXeHIIII H IIpH 6onbmm CMeWeHEi XX COOTBeT-HCrY II MaKCHMaJIbHOii BMKOCTbIo MQn-CTPYKTYPbI B PeXHMe cco6orarqe~m>>. 3KCnepEi-MeHTaJIbHbIe AaHHbIe O6%IICHXIoTCII B PaMKaX <<06061qe~~oi MOAeJIIl Ae@KTOB>> M3MeHe-HHeM IIOTeHqIlaJIbHOrO peJIbe@a B IIOJIyIIpOBOAHHKe B pe3yJIbTaTe 06pa30BaHHX BMCOKOOM-HOrO CJIOII B6nH3H l p H H q b I pa3~ena. 06cym~ae~crr HHTepIIpeTaqkiR CneKTpOB HCrY G d S CTBYIOT napaMeTpaM 0 6 ' b e~~b l x noBymeK. HaiiAeHa Koppenaqm Mexqy BHAOM cnempa MJJII-CTPYKTYP.