Double Patterning Materials for Sub-40nm Application

Anno, Yusuke; Kakizawa, Tomohiro; Hori, Masafumi; Soyano, Akimasa; Fujiwara, Koichi; Nakamura, Atsushi; Sugiura, Makoto; Yamaguchi, Yoshikazu; Shimokawa, Tsutomu

doi:10.2494/photopolymer.21.691

Cited by 6 publications

(3 citation statements)

References 2 publications

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“…For example, line-space patterns formed using a representative 193 nm positive tone photoresist (JSR AR2928JN) shown in Figure A are readily dissolved by common organic solvents such as anisole (as shown in Figure B) and propylene glycol methyl ether acetate (PGMEA). To combat this issue, photoresist “hardening” processes using chemical freeze materials or surface curing agents have been developed to render photoresist patterns stable to subsequent coating processes used in double patterning schemes. − Unfortunately, the effectiveness of such processes which rely primarily on surface modification depends strongly on the particular photoresist in question and may not provide sufficient thermal stability for use in DSA. For example, hardened 193 nm positive tone photoresist patterns (JSR AR2928JN treated with JSR NFC FZX 112 chemical freeze material) before and after a 60 s bake at various temperatures are shown in Figure C.…”

Section: Resultsmentioning

confidence: 99%

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.

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Section: Resultsmentioning

confidence: 99%

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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“…Resist freezing (123)(124)(125) requires two coating and two development steps, and the wafer must leave the exposure chuck to undergo a freezing process, which may involve coating the freezing material over the first developed image-with a subsequent bake to freeze the image (cross-linking chemistry) that renders it insoluble in an aqueous base developer. The freezing material is removed, and the second resist coat, exposure, and development steps are performed to obtain the desired double pattern.…”

Section: Figure 17mentioning

confidence: 99%

Immersion Lithography: Photomask and Wafer-Level Materials

French

Tran

2009

Annu. Rev. Mater. Res.

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Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density. 93 Annu. Rev. Mater. Res. 2009.39:93-126. Downloaded from www.annualreviews.org by Otterbein University on 09/17/13. For personal use only.

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“…The LLE DP is also applicable to generate contact hole pattern utilizing cross line formation. 18) Figure 20 shows top-down and cross section profile of hole patterns generated through pattern freezing process free LLE DP. Nikon NSR-S609B 1.07 NA 193 nm immersion scanner and Tokyo Electron CLEAN TRACK LITHIUS i+ lithography cluster was applied in this testing.…”

Section: Formation Of Contact Hole Pattern Utilizing Positive-positiv...mentioning

confidence: 99%

Pattern Freezing Process Free Litho–Litho–Etch Double Patterning

Ando¹,

Takeshita²,

Takasu³

et al. 2009

jjap

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Double patterning technology based on existing ArF immersion lithography is considered as the most viable option for complementary metal oxide semiconductor (CMOS) node of 32 nm and below. Most of double patterning approaches previously described requires intermediate processing step such as hard mask etching, spacer material deposition, and resist pattern freezing. The requirement of these additional steps is now leading way to requests for throughput reduction and low cost for production for double patterning technology applications. In this paper, litho-litho-etch (LLE) double patterning without any intermediate processing steps is investigated to achieve narrow pitch resist imaging. The LLE options examined in this work are combinations of positive tone-negative tone and positive tonepositive tone photoresist double patterning process. These are the alternative processes in pattern freezing process free LLE double patterning. The goals of this work are to determine witch of these approaches is the most viable for future application and to confirm the patterning potential for 32 nm and below half pitch resist imaging.

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Double Patterning Materials for Sub-40nm Application

Cited by 6 publications

References 2 publications

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Immersion Lithography: Photomask and Wafer-Level Materials

Pattern Freezing Process Free Litho–Litho–Etch Double Patterning

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