2019
DOI: 10.1049/iet-cds.2018.5201
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Drain current modelling of double gate‐all‐around (DGAA) MOSFETs

Abstract: Here, an analytical modelling of drain current is presented for double gate-all-around (DGAA) MOSFETs. A common feature in all the multi-gate (MG) MOSFETs is that the channel charge in the sub-threshold regime is proportional to the channel cross-sectional area; whereas, the inversion charges above threshold locate near the Si/SiO 2 interfaces and are proportional to the total gated perimeter of the channel body. This distinctive feature introduces the notion of equivalent charge and has been widely used to mo… Show more

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Cited by 10 publications
(3 citation statements)
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“…)is the channel center potential given in equation ( 9) and (10). By integrating equation (38) with the cross-sectional area and full channel length, the I sub is obtained as…”
Section: Subthreshold Regionmentioning
confidence: 99%
See 1 more Smart Citation
“…)is the channel center potential given in equation ( 9) and (10). By integrating equation (38) with the cross-sectional area and full channel length, the I sub is obtained as…”
Section: Subthreshold Regionmentioning
confidence: 99%
“…As a result, bulk-silicon transistors are experiencing the same difficulties as MOSFETs due to the presence of Short Channel Effects (SCEs) [1]. To minimize these SCEs, novel device architectures such as Double gate (DG) FET [2][3][4], FinFET [5][6][7], Quadraple gate FET [8,9], and gate all around (GAA) FET [10][11][12][13][14] are introduced in the literature. However, DG FETs poses a challenge in the symmetrical alignment of the front and back gates.…”
Section: Introductionmentioning
confidence: 99%
“…阈值电压 [25] , 由图11可见, 随着栅介质常数的增 大, 栅控性能变好, 沟道反型电荷密度增大, 漏源 电流增加, 阈值电压逐渐减小. 模型仿真得到的 -特性与TCAD的结果 [26] 基本一致. )…”
Section: 漏源电流随栅源电压变化曲线 插图为不同栅介质unclassified