Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon

Lee, Ung Gi; Jang, Jin

doi:10.1109/led.2011.2159475

Cited by 11 publications

(10 citation statements)

References 13 publications

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“…Additionally, the LS coverage of th2 S/D region has obvious impact on the drain current, since number 1 device shows much lower current than number 3 device, while number 2 and 3 device show similar drain current. It may be explained by the vertical electrical field between S/D region and the LS layer changes the electrical field distribution in the channel [7] [8]. The result shown in Table.1 and Figure.5 proves that number 2 device has more stable behavior in terms of threshold voltage and output performance.…”

Section: Theorymentioning

confidence: 85%

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

Zhao

Hao

Sun

et al. 2018

Symp Digest of Tech Papers

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To integrate the function of finger-print recognition within the OLED display panel, a light-shield (LS) metal layer is incorporated underneath the buffer layer to form fingerprint image on the sensor based on the principle of puncture-forming picture. Since the LS metal layer is underneath the LTPS TFT, it has some impact on the IV performance of the p-type LTPS TFT. It has been shown that the floating LS layer causes the kink effect on the output characteristics curves of the p-type TFT. Upon putting bias on the LS layer, the threshold voltage (V th ) shifting has been observed as well as the eliminating of the kink effect caused by the floating LS layer. The V th shifting effect may be explained by the substrate bias effect. The biased LS layer may increase the uniformity of the threshold voltage throughout the whole panel, gives better image quality. Author KeywordsLTPS, TFT, light-shield (LS) metal layer, kink effect, substrate bias effect Number 0 device Number 1 device Number 2 device Number 3 device P-5 / M. Zhao SID 2018 DIGEST • 1209 ISSN 0097-996X/18/4703-1209-$1.00 © 2018 SID P-5 / M. Zhao SID 2018 DIGEST • 1211

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Section: Theorymentioning

confidence: 85%

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

Zhao

Hao

Sun

et al. 2018

Symp Digest of Tech Papers

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“…5, the energy barrier in the back of the channel becomes increasingly low as the drain-source voltage increases, owing to the electric field induced by the drain-source voltage, commonly called the DIBL effect, which commonly appears in a short channel device, and it occurs after the application of off-state stress. [18,19] For a device with a shorter channel 027101-3 length, the voltage across the drain and source (V DS ) is increased, more field lines penetrate into the inside of the channel from the drain end. [18] Due to the electric field penetration, the barrier height around the channel is lowered, [18,19] finally allowing electrons from the source region to punch through the buffer layer over the reduced barrier, resulting in buffer leakage currents in both devices.…”

Section: Discussionmentioning

confidence: 99%

“…[18,19] For a device with a shorter channel 027101-3 length, the voltage across the drain and source (V DS ) is increased, more field lines penetrate into the inside of the channel from the drain end. [18] Due to the electric field penetration, the barrier height around the channel is lowered, [18,19] finally allowing electrons from the source region to punch through the buffer layer over the reduced barrier, resulting in buffer leakage currents in both devices. By comparing Fig.…”

Section: Discussionmentioning

confidence: 99%

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Ma¹,

Ya-Man²,

Wang³

et al. 2015

Chinese Phys. B

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“…All the a-IGZO TFTs exhibit typical transistor behavior with no drain-induced barrier lowering effect. [50,51] The field-effect mobility (µ FE ) curves are also shown in Figure 2a-e for the respective devices. The a-IGZO TFT with no passivation exhibits the µ FE of 17.13 cm 2 V −1 s −1 , V TH of 1.11 V, and subthreshold swing (SS) of 115 mV dec −1 , as shown in Figure 2a.…”

Section: Sputtered A-igzo Tfts With Single and Stack Passivation Layersmentioning

confidence: 99%

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Islam

Hasan

Ali

et al. 2022

Adv Materials Inter

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A stack passivation by spray pyrolysis is demonstrated for high performance and stable amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device performances and stabilities of a‐IGZO TFTs are compared with single zirconium‐aluminium‐oxide (ZAO), aluminium oxide (Al2O3), and stack ZAO/Al2O3 and Al2O3/ZAO passivation layers. The a‐IGZO TFTs with Al2O3/ZAO stack exhibit high performance and excellent stabilities under electrical, thermal, and environmental tests with negligible threshold voltage shift. The origin of the device performances and improved stabilities are analyzed using X‐ray photoelectron spectroscopy and high‐resolution transmission electron microscopy analyses. It is found that the Zr elements diffuse into the a‐IGZO channel when ZAO is directly deposited on the a‐IGZO, resulting in the deterioration of the device performance. It is also found that the Al2O3 single layer on top of the a‐IGZO cannot protect the back‐channel from moisture diffusion. But a thin Al2O3 layer on top of the TFTs can protect the diffusion of Zr elements from ZAO into the a‐IGZO channel and enhances the performance and stabilities. Therefore, the low cost, Al2O3/ZAO stack by spray pyrolysis on the sputtered a‐IGZO can be an excellent passivation for highly stable metal‐oxide TFTs.

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Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon

Cited by 11 publications

References 13 publications

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

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Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon

Cited by 11 publications

References 13 publications

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

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Product

Resources

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Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors