Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

A physical model for the kink effect in InAlAs/InGaAs HEMTs

“…These results have led to a number of kink models that invoke impact ionization, including hole trap charging beneath the gate in the insulator and in the buffer [19]; pure impact ionization [20], [21], source resistance reduction [3], [4], [22]; and SOI-type floating body effects [23], [24]. While each of these models give some insight into the kink, none adequately explain all of the kink's behavior.…”

Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs

“…The gate current at moderate negative gate voltage (Vg=-2 to -5V) is about two orders of magnitude lower for the device with the mixed spacer. Similar improvement was observed with a pseudomorphic Alrich InAIAs spacer [4]. The use of highly strained InGaP spacer also led to a similar improvement, the valence band offset with InGaAs beinn the same as with …”

Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1−xAs channel

“…Moreover, the InP layer, having also increased the valence band discontinuity by about 0.23 eV, can strongly reduce the impact-ionized holes tunnelling to the gate electrode. Both the LGC-HEMT and LM-HEMT have exhibited superior low peak on-state gate leakages as compared to the previous reports [7][8][9][10]. The characteristics of extrinsic transconductance (g m ), output conductance (g d ) and voltage gain (A V ) versus the drain-source voltages are shown in figure 5.…”